@misc{9242033,
  abstract     = {{Promising advances in the field of ultra low power computing are based on the design of high-density ferroelectric memories with non-destructive readout. In this bachelor thesis, the objective is to study HfxZr1−xO2 thin films as one of the most popular candidates to replace traditional dielectrics. A thermal annealing procedure is required for the fabrication of these devices, since the ferroelectric phase can only be formed through a phase transition induced through heat and mechanical stress. On the contrary, heat does often promote changes in the stoichiometry and the interface quality. So far, the lack of control over these side effects is limiting the commercialization of the devices. An X-ray absorption spectroscopy (XAS) and hard X-ray photoelectron spectroscopy (HAXPES) study on an in situ annealing experiment are used for monitoring of how the chemical composition and the crystal structure are directly affected by temperatures. This simulates realistic fabrication conditions and serves to improve the understanding on the correlations. For this work two sample structures are being compared. Both the data collected through XAS and HAXPES measurements have mutually shown a transition temperature with a difference attributable to the variation in the sample structure. The alteration of the sample structures after the transition was shown to be irreversible. Additionally, both samples were demonstrated to have undergone electrostatic changes.}},
  author       = {{Gneuss, Viviana Leilani}},
  language     = {{eng}},
  note         = {{Student Paper}},
  title        = {{Characterization of ultrathin ferroelectric oxide films using X-ray spectroscopy}},
  year         = {{2026}},
}