LUP Statistics
Record
- Title
- Vertical InAs nanowire MOSFETs with IDS = 1.34 mA/µm and gm = 1.19 mS/µm at VDS = 0.5 V
- Type
- Conference Abstract
- Publ. year
- 2012
- Author/s
- Persson, Karl-Magnus; Berg, Martin; Borg, Mattias; Wu, Jun et al.
- Department/s
- Department of Electrical and Information Technology; Solid State Physics; Nano-lup-obsolete; ELLIIT: the Linköping-Lund initiative on IT and mobile communication
- In LUP since
- 2016-04-01
Downloads
| Total | This Year | This Month |
| 351 | 5 | 0 |
United States of America  |
118 (34%) |
China  |
54 (15%) |
Germany  |
44 (13%) |
Russian Federation  |
19 (5%) |
Sweden  |
18 (5%) |
France  |
15 (4%) |
Taiwan (China)  |
11 (3%) |
South Korea  |
9 (3%) |
United Kingdom of Great Britain and Northern Ireland  |
9 (3%) |
Czechia  |
8 (2%) |
Japan  |
6 (2%) |
Belgium  |
5 (1%) |
Jordan  |
3 (1%) |
Ukraine  |
3 (1%) |
Denmark  |
2 (1%) |
Hong Kong (China)  |
2 (1%) |
Brazil  |
2 (1%) |
Israel  |
2 (1%) |
Romania  |
2 (1%) |
Finland  |
2 (1%) |
Netherlands  |
2 (1%) |
Ireland  |
2 (1%) |
Singapore  |
2 (1%) |
Austria  |
1 (0%) |
Bangladesh  |
1 (0%) |
Algeria  |
1 (0%) |
India  |
1 (0%) |
Thailand  |
1 (0%) |
Unknown  |
1 (0%) |
Hungary  |
1 (0%) |
Canada  |
1 (0%) |
Malta  |
1 (0%) |
Georgia  |
1 (0%) |
Senegal  |
1 (0%) |