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Vertical InAs nanowire MOSFETs with IDS = 1.34 mA/µm and gm = 1.19 mS/µm at VDS = 0.5 V

Persson, Karl-Magnus LU ; Berg, Martin LU ; Borg, Mattias LU orcid ; Wu, Jun LU ; Sjöland, Henrik LU orcid ; Lind, Erik LU and Wernersson, Lars-Erik LU (2012) Device Research Conference (DRC), 2012 70th Annual In IEEE Electron Device Letters p.195-196
Please use this url to cite or link to this publication:
author
; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Nanowire, Transistor, FET, MOSFET, InAs
in
IEEE Electron Device Letters
pages
195 - 196
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
conference name
Device Research Conference (DRC), 2012 70th Annual
conference location
University Park, PA, United States
conference dates
2012-06-18
external identifiers
  • scopus:84866910921
ISSN
0741-3106
DOI
10.1109/DRC.2012.6256966
project
EIT_WWW Wireless with Wires
language
English
LU publication?
yes
id
71f2b9e7-75be-4d61-ac87-52e06e7a18d4 (old id 4330783)
alternative location
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6256966
date added to LUP
2016-04-01 13:00:51
date last changed
2024-01-09 05:28:47
@misc{71f2b9e7-75be-4d61-ac87-52e06e7a18d4,
  author       = {{Persson, Karl-Magnus and Berg, Martin and Borg, Mattias and Wu, Jun and Sjöland, Henrik and Lind, Erik and Wernersson, Lars-Erik}},
  issn         = {{0741-3106}},
  keywords     = {{Nanowire; Transistor; FET; MOSFET; InAs}},
  language     = {{eng}},
  note         = {{Conference Abstract}},
  pages        = {{195--196}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  series       = {{IEEE Electron Device Letters}},
  title        = {{Vertical InAs nanowire MOSFETs with IDS = 1.34 mA/µm and gm = 1.19 mS/µm at VDS = 0.5 V}},
  url          = {{https://lup.lub.lu.se/search/files/3105329/4330817.pdf}},
  doi          = {{10.1109/DRC.2012.6256966}},
  year         = {{2012}},
}