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2022
Mark Lateral III-V Nanowire MOSFETs in Low-Noise Amplifier Stages
Andric, Stefan ^LU ; Lindelow, Fredrik ^LU ; Fhager, Lars Ohlsson ^LU ; Lind, Erik ^LU and Wernersson, Lars Erik ^LU (2022) In IEEE Transactions on Microwave Theory and Techniques 70(2). p.1284-1291
- Contribution to journal › Article
Mark Improved Electrostatics through Digital Etch Schemes in Vertical GaSb Nanowire p-MOSFETs on Si
Zhu, Zhongyunshen ^LU ; Jönsson, Adam ^LU ; Liu, Yen Po ^LU ; Svensson, Johannes ^LU ; Timm, Rainer ^LU and Wernersson, Lars Erik ^LU (2022) In ACS Applied Electronic Materials 4(1). p.531-538
- Contribution to journal › Article
Mark InGaAs Nanowire and Quantum Well Devices
Södergren, Lasse ^LU (2022)
- Thesis › Doctoral thesis (compilation)
Mark Low-Frequency Noise in Vertical InAs/InGaAs Gate-All-Around MOSFETs at 15 K for Cryogenic Applications
Mamidala, Saketh, Ram ^LU ; Svensson, Johannes ^LU ; Skog, Sebastian ; Johannesson, Sofie and Wernersson, Lars-Erik ^LU (2022) In IEEE Electron Device Letters 43(12). p.2033-2033
- Contribution to journal › Article
2021
Mark III-V Nanowire MOSFET High-Frequency Technology Platform
Andric, Stefan ^LU (2021)
- Thesis › Doctoral thesis (compilation)
Mark Increased Breakdown Voltage in Vertical Heterostructure III-V Nanowire MOSFETs with a Field Plate
Kilpi, Olli Pekka ^LU ; Andric, Stefan ^LU ; Svensson, Johannes ^LU ; Ram, Mamidala Saketh ^LU ; Lind, Erik ^LU and Wernersson, Lars Erik ^LU (2021) In IEEE Electron Device Letters 42(11). p.1596-1598
- Contribution to journal › Article
Mark Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performance
Jönsson, Adam ^LU ; Svensson, Johannes ^LU ; Fiordaliso, Elisabetta Maria ; Lind, Erik ^LU ; Hellenbrand, Markus ^LU and Wernersson, Lars Erik ^LU (2021) In ACS Applied Electronic Materials 3(12). p.5240-5247
- Contribution to journal › Article
Mark Millimeter-Wave Vertical III-V Nanowire MOSFET Device-To-Circuit Co-Design
Andric, Stefan ^LU ; Ohlsson Fhager, Lars ^LU and Wernersson, Lars Erik ^LU (2021) In IEEE Transactions on Nanotechnology 20. p.434-440
- Contribution to journal › Article
Mark Vertical Heterostructure III-V MOSFETs for CMOS, RF and Memory Applications
Jönsson, Adam ^LU (2021)
- Thesis › Doctoral thesis (compilation)
Mark Capacitance Scaling in In_0.71Ga_0.29As/InP MOSFETs with Self-Aligned a:Si Spacers
Garigapati, Navya S. ^LU ; Lindelow, Fredrik ^LU ; Sodergren, Lasse ^LU and Lind, Erik ^LU (2021) In IEEE Transactions on Electron Devices 68(8). p.3762-3767
- Contribution to journal › Article

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