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- 2024
-
Mark
TFET Circuit Configurations Operating below 60 mV/dec
(
- Contribution to journal › Article
-
Mark
III-V Devices for Emerging Electronic Applications
2024)(
- Thesis › Doctoral thesis (compilation)
- 2023
-
Mark
Vertical III-V Nanowires For In-Memory Computing
2023)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Geometrical Magnetoresistance as a Tool for Carrier Mobility Extraction in InGaAs MOSFETs
(
- Contribution to journal › Article
- 2022
-
Mark
InGaAs Nanowire and Quantum Well Devices
2022)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Improved Electrostatics through Digital Etch Schemes in Vertical GaSb Nanowire p-MOSFETs on Si
(
- Contribution to journal › Article
-
Mark
Lateral III-V Nanowire MOSFETs in Low-Noise Amplifier Stages
(
- Contribution to journal › Article
-
Mark
Low-Frequency Noise in Vertical InAs/InGaAs Gate-All-Around MOSFETs at 15 K for Cryogenic Applications
(
- Contribution to journal › Article
- 2021
-
Mark
Design of III-V Vertical Nanowire MOSFETs for Near-Unilateral Millimeter-Wave Operation
2021) 15th European Microwave Integrated Circuits Conference, EuMIC 2020 In EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference p.85-88(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Increased Breakdown Voltage in Vertical Heterostructure III-V Nanowire MOSFETs with a Field Plate
(
- Contribution to journal › Article
-
Mark
Vertical Heterostructure III-V MOSFETs for CMOS, RF and Memory Applications
2021)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Capacitance Scaling in In0.71Ga0.29As/InP MOSFETs with Self-Aligned a:Si Spacers
(
- Contribution to journal › Article
-
Mark
Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performance
(
- Contribution to journal › Article
-
Mark
Millimeter-Wave Vertical III-V Nanowire MOSFET Device-To-Circuit Co-Design
(
- Contribution to journal › Article
-
Mark
III-V Nanowire MOSFET High-Frequency Technology Platform
2021)(
- Thesis › Doctoral thesis (compilation)
- 2020
-
Mark
High-Performance Vertical III-V Nanowire MOSFETs on Si with gm> 3 mS/μm
(
- Contribution to journal › Article
-
Mark
Effects of traps in the gate stack on the small-signal RF response of III-V nanowire MOSFETs
(
- Contribution to journal › Article
-
Mark
Electrical Characterisation of III-V Nanowire MOSFETs
2020) In Series of Licentiate and Doctoral Theses(
- Thesis › Doctoral thesis (compilation)
- 2019
-
Mark
Balanced Drive Currents in 10–20 nm Diameter Nanowire All-III-V CMOS on Si
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Electrical Properties of Vertical InAs/InGaAs Heterostructure MOSFETs
(
- Contribution to journal › Article
-
Mark
Vertical III-V Nanowire MOSFETs
2019) In Series of licentiate and doctoral theses(
- Thesis › Doctoral thesis (compilation)
-
Mark
Low-Frequency Noise in Nanowire and Planar III-V MOSFETs
2019) In Microelectronic Engineering(
- Contribution to journal › Article
-
Mark
Low-complexity III-V circuitry for millimeter wave communication and radar
2019) 2019 IEEE Globecom Workshops, GC Wkshps 2019 In 2019 IEEE Globecom Workshops, GC Wkshps 2019 - Proceedings(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2018
-
Mark
A Method for Determining Trap Distributions of Specific Channel Surfaces in InGaAs Tri-gate MOSFETs
(
- Contribution to journal › Article
-
Mark
A Self-aligned Gate-last Process applied to All-III-V CMOS on Si
(
- Contribution to journal › Article
- 2017
-
Mark
III-V MOSFETs for High-Frequency and Digital Applications
2017)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Low-Frequency Noise in III-V Nanowire TFETs and MOSFETs
2017) In IEEE Electron Device Letters(
- Contribution to journal › Letter
-
Mark
Gated Hall effect measurements on selectively grown InGaAs nanowires
(
- Contribution to journal › Article
-
Mark
Vertical III-V Nanowire Tunnel Field-Effect Transistor
2017)(
- Thesis › Doctoral thesis (compilation)
- 2016
-
Mark
Ballistic modeling of InAs nanowire transistors
(
- Contribution to journal › Article
-
Mark
Electrical Characterization and Modeling of Gate-Last Vertical InAs Nanowire MOSFETs on Si
(
- Contribution to journal › Letter
-
Mark
High-Performance Lateral Nanowire InGaAs MOSFETs with Improved On-Current
(
- Contribution to journal › Article
-
Mark
Electrical Characterization of III-V Nanostructure
2016)(
- Thesis › Doctoral thesis (compilation)
-
Mark
High frequency III-V nanowire MOSFETs
(
- Contribution to journal › Scientific review
-
Mark
3-D Integrated Track-and-Hold Circuit Using InAs Nanowire MOSFETs and Capacitors
(
- Contribution to journal › Article
-
Mark
Vertical III-V/High-k Nanowire MOS Capacitors and Transistors
2016) In Lund University Faculty of Medicine Doctoral Dissertation Series(
- Thesis › Doctoral thesis (monograph)
- 2015
-
Mark
Vertical InAs Nanowire Devices and RF Circuits
(
- Thesis › Doctoral thesis (compilation)
-
Mark
InAs Nanowire Devices and Circuits
(
- Thesis › Doctoral thesis (compilation)
-
Mark
High Frequency InGaAs Nanowire MOSFETs
2015) 37th IEEE International Symposium on Workload Characterization, IISWC 2015(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2014
-
Mark
High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates
(
- Contribution to journal › Article
-
Mark
RF and DC Analysis of Stressed InGaAs MOSFETs
(
- Contribution to specialist publication or newspaper › Specialist publication article
-
Mark
InAs nanowire MOSFET differential active mixer on Si-substrate
(
- Contribution to journal › Article
-
Mark
Nanowire Transistors and RF Circuits for Low-Power Applications
2014)(
- Thesis › Doctoral thesis (compilation)
-
Mark
In0.53Ga0.47As Multiple-Gate Field-Effect Transistors With Selectively Regrown Channels
(
- Contribution to journal › Article
-
Mark
Radio-Frequency Characterization of Selectively Regrown InGaAs Lateral Nanowire MOSFETs
(
- Contribution to journal › Article
- 2013
-
Mark
Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates
(
- Contribution to journal › Article
-
Mark
Surface and core contribution to 1/f-noise in InAs nanowire metal-oxide-semiconductor field-effect transistors
(
- Contribution to journal › Article
-
Mark
RF reliability of gate last InGaAs nMOSFETs with high-k dielectric
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2012
-
Mark
Vertical InAs nanowire MOSFETs with IDS = 1.34 mA/µm and gm = 1.19 mS/µm at VDS = 0.5 V
(
- Contribution to journal › Published meeting abstract
-
Mark
High-Frequency Performance of Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
(
- Contribution to journal › Article
-
Mark
Demonstration of Defect-Free and Composition Tunable Ga(x)In(1-x)Sb Nanowires.
(
- Contribution to journal › Article
-
Mark
Highly controlled InAs nanowires on Si(111) wafers by MOVPE
2012) 38th International Symposium on Compound Semiconductors (ISCS)/23rd International Conference on Indium Phosphide and Related Materials (IPRM)/Compound Semiconductor Week 9(2).(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Electron Tunneling and Field-Effect Devices in mm-Wave Circuits
2012)(
- Thesis › Doctoral thesis (compilation)
-
Mark
High frequency vertical InAs nanowire MOSFETs integrated on Si substrates
2012) 38th International Symposium on Compound Semiconductors (ISCS)/23rd International Conference on Indium Phosphide and Related Materials (IPRM)/Compound Semiconductor Week In Physica Status Solidi. C, Current Topics in Solid State Physics 9(2). p.350-353(
- Contribution to journal › Article
- 2011
-
Mark
RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates
(
- Contribution to journal › Article
-
Mark
Temperature and annealing effects on InAs nanowire MOSFETs
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding