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High Frequency InGaAs Nanowire MOSFETs

Lind, E. LU orcid (2015) 37th IEEE International Symposium on Workload Characterization, IISWC 2015
Abstract

We present compact modeling, DC and RF characterization of lateral and vertical nanowire MOSFETs. Lateral tri-gate nanowire devices on InP substrates have demonstrated a maximum gm=2.95 mS/ μm at VDS=0.5 V, and fT/fmax=290/350 GHz. Vertical gate-all-around InAs wires integrated on Si substrates have demonstrated gm=1.35 mS/μm and fT/fmax=100/155 GHz. We also demonstrate a non- parabolic, ballistic charge/current compact model for rectangular nanowire FETs.

Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
III-V, Indium gallium arsenide, Millimeter wave transistors, MOSFET, Nanowires
host publication
2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015
article number
7314508
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
conference name
37th IEEE International Symposium on Workload Characterization, IISWC 2015
conference location
New Orleans, United States
conference dates
2015-10-11 - 2015-10-14
external identifiers
  • scopus:84962304075
ISBN
9781479984947
DOI
10.1109/CSICS.2015.7314508
language
English
LU publication?
yes
id
e2f64722-67b8-4ddb-af0d-ab7972a9c7f6
date added to LUP
2016-09-23 07:24:01
date last changed
2024-04-19 09:12:05
@inproceedings{e2f64722-67b8-4ddb-af0d-ab7972a9c7f6,
  abstract     = {{<p>We present compact modeling, DC and RF characterization of lateral and vertical nanowire MOSFETs. Lateral tri-gate nanowire devices on InP substrates have demonstrated a maximum g<sub>m</sub>=2.95 mS/ μm at V<sub>DS</sub>=0.5 V, and f<sub>T</sub>/f<sub>max</sub>=290/350 GHz. Vertical gate-all-around InAs wires integrated on Si substrates have demonstrated g<sub>m</sub>=1.35 mS/μm and f<sub>T</sub>/f<sub>max</sub>=100/155 GHz. We also demonstrate a non- parabolic, ballistic charge/current compact model for rectangular nanowire FETs.</p>}},
  author       = {{Lind, E.}},
  booktitle    = {{2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015}},
  isbn         = {{9781479984947}},
  keywords     = {{III-V; Indium gallium arsenide; Millimeter wave transistors; MOSFET; Nanowires}},
  language     = {{eng}},
  month        = {{10}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  title        = {{High Frequency InGaAs Nanowire MOSFETs}},
  url          = {{http://dx.doi.org/10.1109/CSICS.2015.7314508}},
  doi          = {{10.1109/CSICS.2015.7314508}},
  year         = {{2015}},
}