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- 2022
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Mark
Low-Frequency Noise in Vertical InAs/InGaAs Gate-All-Around MOSFETs at 15 K for Cryogenic Applications
- Contribution to journal › Article
- 2015
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Mark
High Frequency InGaAs Nanowire MOSFETs
(2015) 37th IEEE International Symposium on Workload Characterization, IISWC 2015
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
