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Low-Frequency Noise in Vertical InAs/InGaAs Gate-All-Around MOSFETs at 15 K for Cryogenic Applications

Mamidala, Saketh, Ram LU orcid ; Svensson, Johannes LU ; Skog, Sebastian ; Johannesson, Sofie and Wernersson, Lars-Erik LU (2022) In IEEE Electron Device Letters 43(12). p.2033-2033
Abstract
Low-frequency noise (LFN), or 1/ f -noise, can be used effectively to evaluate device reliability which is a major concern in analog as well as digital circuits. In this work, we present 1/ f -noise characterization of vertical InAs/InGaAs gate-all-around (GAA) MOSFETs with a 70-nm gate length ( LG ) measured at cryogenic temperatures down to 15 K. The measurements at cryogenic temperatures reveal that the physical mechanism of 1/ f -noise changes from carrier number fluctuations at 300 K to mobility fluctuations at 15 K. We conclude that the channel conduction at 15 K is dominated by the nanowire core instead of the nanowire surface due to the effect of the border and interface traps freezing out.... (More)
Low-frequency noise (LFN), or 1/ f -noise, can be used effectively to evaluate device reliability which is a major concern in analog as well as digital circuits. In this work, we present 1/ f -noise characterization of vertical InAs/InGaAs gate-all-around (GAA) MOSFETs with a 70-nm gate length ( LG ) measured at cryogenic temperatures down to 15 K. The measurements at cryogenic temperatures reveal that the physical mechanism of 1/ f -noise changes from carrier number fluctuations at 300 K to mobility fluctuations at 15 K. We conclude that the channel conduction at 15 K is dominated by the nanowire core instead of the nanowire surface due to the effect of the border and interface traps freezing out. Vertical InAs/InGaAs GAA MOSFETs at 15 K, due to reduced surface scattering, exhibit a low value of Hooge parameter, αH ~ 5×10-6 and also have a low input-referred gate voltage noise spectral density, SVG=4.3μV2μm2 Hz -1 that are important for reliable cryogenic circuit applications. (Less)
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author
; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
MOSFET, Noise measurement, Fluctuations, Temperature, Cryogenics, Indium gallium arsenide, Logic gates
in
IEEE Electron Device Letters
volume
43
issue
12
pages
2036 pages
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • scopus:85140750459
ISSN
0741-3106
DOI
10.1109/LED.2022.3216022
language
English
LU publication?
yes
id
6e869314-c322-43cf-90c7-ebf61ef853bd
date added to LUP
2022-11-30 09:52:38
date last changed
2023-11-20 18:02:03
@article{6e869314-c322-43cf-90c7-ebf61ef853bd,
  abstract     = {{Low-frequency noise (LFN), or 1/ <i>f</i> -noise, can be used effectively to evaluate device reliability which is a major concern in analog as well as digital circuits. In this work, we present 1/ <i>f</i> -noise characterization of vertical InAs/InGaAs gate-all-around (GAA) MOSFETs with a 70-nm gate length ( <i>L</i><sub>G</sub> ) measured at cryogenic temperatures down to 15 K. The measurements at cryogenic temperatures reveal that the physical mechanism of 1/ <i>f</i> -noise changes from carrier number fluctuations at 300 K to mobility fluctuations at 15 K. We conclude that the channel conduction at 15 K is dominated by the nanowire core instead of the nanowire surface due to the effect of the border and interface traps freezing out. Vertical InAs/InGaAs GAA MOSFETs at 15 K, due to reduced surface scattering, exhibit a low value of Hooge parameter, α<sub>H</sub> ~ 5×10-<sup>6</sup> and also have a low input-referred gate voltage noise spectral density, <i>S</i><sub>VG</sub>=4.3μV<sup>2</sup>μm<sup>2</sup> Hz<sup> -1</sup> that are important for reliable cryogenic circuit applications.}},
  author       = {{Mamidala, Saketh, Ram and Svensson, Johannes and Skog, Sebastian and Johannesson, Sofie and Wernersson, Lars-Erik}},
  issn         = {{0741-3106}},
  keywords     = {{MOSFET; Noise measurement; Fluctuations; Temperature; Cryogenics; Indium gallium arsenide; Logic gates}},
  language     = {{eng}},
  month        = {{10}},
  number       = {{12}},
  pages        = {{2033--2033}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  series       = {{IEEE Electron Device Letters}},
  title        = {{Low-Frequency Noise in Vertical InAs/InGaAs Gate-All-Around MOSFETs at 15 K for Cryogenic Applications}},
  url          = {{https://lup.lub.lu.se/search/files/129825649/Cryo_LFN_EDL_AuthorVersion.pdf}},
  doi          = {{10.1109/LED.2022.3216022}},
  volume       = {{43}},
  year         = {{2022}},
}