Low-Frequency Noise in Vertical InAs/InGaAs Gate-All-Around MOSFETs at 15 K for Cryogenic Applications
(2022) In IEEE Electron Device Letters 43(12). p.2033-2033- Abstract
- Low-frequency noise (LFN), or 1/ f -noise, can be used effectively to evaluate device reliability which is a major concern in analog as well as digital circuits. In this work, we present 1/ f -noise characterization of vertical InAs/InGaAs gate-all-around (GAA) MOSFETs with a 70-nm gate length ( LG ) measured at cryogenic temperatures down to 15 K. The measurements at cryogenic temperatures reveal that the physical mechanism of 1/ f -noise changes from carrier number fluctuations at 300 K to mobility fluctuations at 15 K. We conclude that the channel conduction at 15 K is dominated by the nanowire core instead of the nanowire surface due to the effect of the border and interface traps freezing out.... (More)
- Low-frequency noise (LFN), or 1/ f -noise, can be used effectively to evaluate device reliability which is a major concern in analog as well as digital circuits. In this work, we present 1/ f -noise characterization of vertical InAs/InGaAs gate-all-around (GAA) MOSFETs with a 70-nm gate length ( LG ) measured at cryogenic temperatures down to 15 K. The measurements at cryogenic temperatures reveal that the physical mechanism of 1/ f -noise changes from carrier number fluctuations at 300 K to mobility fluctuations at 15 K. We conclude that the channel conduction at 15 K is dominated by the nanowire core instead of the nanowire surface due to the effect of the border and interface traps freezing out. Vertical InAs/InGaAs GAA MOSFETs at 15 K, due to reduced surface scattering, exhibit a low value of Hooge parameter, αH ~ 5×10-6 and also have a low input-referred gate voltage noise spectral density, SVG=4.3μV2μm2 Hz -1 that are important for reliable cryogenic circuit applications. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/6e869314-c322-43cf-90c7-ebf61ef853bd
- author
- Mamidala, Saketh, Ram LU ; Svensson, Johannes LU ; Skog, Sebastian ; Johannesson, Sofie and Wernersson, Lars-Erik LU
- organization
- publishing date
- 2022-10-19
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- MOSFET, Noise measurement, Fluctuations, Temperature, Cryogenics, Indium gallium arsenide, Logic gates
- in
- IEEE Electron Device Letters
- volume
- 43
- issue
- 12
- pages
- 2036 pages
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- external identifiers
-
- scopus:85140750459
- ISSN
- 0741-3106
- DOI
- 10.1109/LED.2022.3216022
- language
- English
- LU publication?
- yes
- id
- 6e869314-c322-43cf-90c7-ebf61ef853bd
- date added to LUP
- 2022-11-30 09:52:38
- date last changed
- 2023-11-20 18:02:03
@article{6e869314-c322-43cf-90c7-ebf61ef853bd, abstract = {{Low-frequency noise (LFN), or 1/ <i>f</i> -noise, can be used effectively to evaluate device reliability which is a major concern in analog as well as digital circuits. In this work, we present 1/ <i>f</i> -noise characterization of vertical InAs/InGaAs gate-all-around (GAA) MOSFETs with a 70-nm gate length ( <i>L</i><sub>G</sub> ) measured at cryogenic temperatures down to 15 K. The measurements at cryogenic temperatures reveal that the physical mechanism of 1/ <i>f</i> -noise changes from carrier number fluctuations at 300 K to mobility fluctuations at 15 K. We conclude that the channel conduction at 15 K is dominated by the nanowire core instead of the nanowire surface due to the effect of the border and interface traps freezing out. Vertical InAs/InGaAs GAA MOSFETs at 15 K, due to reduced surface scattering, exhibit a low value of Hooge parameter, α<sub>H</sub> ~ 5×10-<sup>6</sup> and also have a low input-referred gate voltage noise spectral density, <i>S</i><sub>VG</sub>=4.3μV<sup>2</sup>μm<sup>2</sup> Hz<sup> -1</sup> that are important for reliable cryogenic circuit applications.}}, author = {{Mamidala, Saketh, Ram and Svensson, Johannes and Skog, Sebastian and Johannesson, Sofie and Wernersson, Lars-Erik}}, issn = {{0741-3106}}, keywords = {{MOSFET; Noise measurement; Fluctuations; Temperature; Cryogenics; Indium gallium arsenide; Logic gates}}, language = {{eng}}, month = {{10}}, number = {{12}}, pages = {{2033--2033}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, series = {{IEEE Electron Device Letters}}, title = {{Low-Frequency Noise in Vertical InAs/InGaAs Gate-All-Around MOSFETs at 15 K for Cryogenic Applications}}, url = {{https://lup.lub.lu.se/search/files/129825649/Cryo_LFN_EDL_AuthorVersion.pdf}}, doi = {{10.1109/LED.2022.3216022}}, volume = {{43}}, year = {{2022}}, }