Nano Electronics
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- 2025
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Mark
Low Resistivity n‐type GaN Ohmic Contacts on GaN Substrates
- Contribution to journal › Article
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Mark
Interface Characterization of Plasma-Treated InAs Electrodes for Resistive Random-Access Memories Using Capacitance–Voltage Methods
- Contribution to journal › Article
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Mark
Gate Layout and Process Reliability Co-Optimization in High-Speed Vertical III–V Nanowire Metal-Oxide-Semiconductor Field-Effect Transistor Technology
- Contribution to journal › Article
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Mark
Simulating Scaling Effects in Fully Vertical GaN FinFETs
- Contribution to journal › Article
-
Mark
Cryogenic performance of vertical III-V nanowire gate-all-around ferroelectric FETs
(2025) 7th International Conference on Emerging Electronics
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2024
-
Mark
Ferroelectric Tunnel Junction Memristors for In-Memory Computing Accelerators
- Contribution to journal › Article
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Mark
III-V Devices for Emerging Electronic Applications
(2024)
- Thesis › Doctoral thesis (compilation)
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Mark
Source Design of Vertical III-V Nanowire Tunnel Field-Effect Transistors
- Contribution to journal › Article
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Mark
Gate-controlled near-surface Josephson junctions
- Contribution to journal › Article
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Mark
TFET Circuit Configurations Operating below 60 mV/dec
- Contribution to journal › Article
