Nano Electronics
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- 2025
-
Mark
Interface Characterization of Plasma-Treated InAs Electrodes for Resistive Random-Access Memories Using Capacitance–Voltage Methods
(2025) In Physica Status Solidi (A) Applications and Materials Science
- Contribution to journal › Article
-
Mark
Gate Layout and Process Reliability Co-Optimization in High-Speed Vertical III–V Nanowire Metal-Oxide-Semiconductor Field-Effect Transistor Technology
(2025) In Physica Status Solidi (A) Applications and Materials Science
- Contribution to journal › Article
- 2024
-
Mark
III-V Devices for Emerging Electronic Applications
(2024)
- Thesis › Doctoral thesis (compilation)
-
Mark
Source Design of Vertical III-V Nanowire Tunnel Field-Effect Transistors
- Contribution to journal › Article
-
Mark
Gate-controlled near-surface Josephson junctions
- Contribution to journal › Article
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Mark
Cryogenic Evaluation of Resistive Random Access Memory With Enhanced Endurance at 14 K
(2024) In IEEE Transactions on Electron Devices
- Contribution to journal › Article
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Mark
Low Resistivity n‐type GaN Ohmic Contacts on GaN Substrates
(2024) In Physica Status Solidi. A: Applications and Materials Science
- Contribution to journal › Article
-
Mark
RF Characterization of Ferroelectric MOS Capacitors
- Contribution to journal › Article
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Mark
Multifunctional Reconfigurable Operations in an Ultra-Scaled Ferroelectric Negative Transconductance Transistor
- Contribution to journal › Article
-
Mark
Cryogenic Ferroelectricity of HZO Capacitors on a III-V Semiconductor
- Contribution to journal › Article
