Simulating Scaling Effects in Fully Vertical GaN FinFETs
Simko, Alexander ; Garigapati, Navya Sri LU ; Logotheti, Adamantia LU
; Darakchieva, Vanya
LU
and Lind, Erik
LU
(2025)
In Physica Status Solidi (A) Applications and Materials Science
- Abstract
Herein, it is shown that a fully vertical GaN FinFET can reach close to ideal Baliga's figure of merit (BFOM) for thicker drift layers. Devices with drift layers between 1 and 8 (Formula presented.) are simulated using TCAD, and the device geometry is varied to find optimal device performance. For 8 (Formula presented.) drift layers, device operation at the BFOM limit is found with (Formula presented.) and (Formula presented.). An optimal switching FOM at (Formula presented.) is found.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/a33b27ec-6615-4c9f-abb7-538c45ffc722
- author
- Simko, Alexander
; Garigapati, Navya Sri
LU
; Logotheti, Adamantia
LU
; Darakchieva, Vanya
LU
and Lind, Erik
LU
- organization
-
- C3NiT: Centre for III nitride technology
- LTH Profile Area: Nanoscience and Semiconductor Technology
- LU Profile Area: Light and Materials
- Solid State Physics
- NanoLund: Centre for Nanoscience
- LTH Profile Area: The Energy Transition
- Electromagnetics and Nanoelectronics
- LTH Profile Area: AI and Digitalization
- Nano Electronics (research group)
- publishing date
- 2025
- type
- Contribution to journal
- publication status
- epub
- subject
- keywords
- finFETs, GaN, power devices, TCAD
- in
- Physica Status Solidi (A) Applications and Materials Science
- publisher
- Wiley-VCH Verlag
- external identifiers
-
- scopus:105007928041
- ISSN
- 1862-6300
- DOI
- 10.1002/pssa.202500050
- language
- English
- LU publication?
- yes
- additional info
- Publisher Copyright: © 2025 The Author(s). physica status solidi (a) applications and materials science published by Wiley-VCH GmbH.
- id
- a33b27ec-6615-4c9f-abb7-538c45ffc722
- date added to LUP
- 2025-11-06 16:31:18
- date last changed
- 2025-11-10 16:10:27
@article{a33b27ec-6615-4c9f-abb7-538c45ffc722,
abstract = {{<p>Herein, it is shown that a fully vertical GaN FinFET can reach close to ideal Baliga's figure of merit (BFOM) for thicker drift layers. Devices with drift layers between 1 and 8 (Formula presented.) are simulated using TCAD, and the device geometry is varied to find optimal device performance. For 8 (Formula presented.) drift layers, device operation at the BFOM limit is found with (Formula presented.) and (Formula presented.). An optimal switching FOM at (Formula presented.) is found.</p>}},
author = {{Simko, Alexander and Garigapati, Navya Sri and Logotheti, Adamantia and Darakchieva, Vanya and Lind, Erik}},
issn = {{1862-6300}},
keywords = {{finFETs; GaN; power devices; TCAD}},
language = {{eng}},
publisher = {{Wiley-VCH Verlag}},
series = {{Physica Status Solidi (A) Applications and Materials Science}},
title = {{Simulating Scaling Effects in Fully Vertical GaN FinFETs}},
url = {{http://dx.doi.org/10.1002/pssa.202500050}},
doi = {{10.1002/pssa.202500050}},
year = {{2025}},
}