C3NiT: Centre for III nitride technology
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- 2026
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Mark
Impact of AlN buffer thickness on electrical and thermal characteristics of AlGaN/GaN/AlN HEMTs
- Contribution to journal › Article
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Mark
Periodic Inversion Domains on Step-Flow Surfaces of N-Polar GaN Grown on m-Plane Offcut 4H-SiC(0001̅)
- Contribution to journal › Article
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Mark
Spectral Tuning of Hyperbolic Shear Polaritons in Monoclinic Gallium Oxide via Isotopic Substitution
- Contribution to journal › Article
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Mark
Evolution of the below-bandgap anisotropic refractive indices and dielectric functions of β-(AlxGa1− x)2O3 (0 < x < 0.25) determined by generalized spectroscopic ellipsometry
- Contribution to journal › Article
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Mark
Electronic band structure, band-to-band transitions, and anisotropic dielectric functions of orthorhombic NdGaO3
- Contribution to journal › Article
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Mark
Dielectric function, band-to-band transitions, and exciton properties of bulk single-crystal In2O3 from room temperature to 600 °C determined by in situ spectroscopic ellipsometry
- Contribution to journal › Article
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Mark
Quasiballistic (In,Ga)As Josephson field-effect transistor with molybdenum electrodes
- Contribution to journal › Article
- 2025
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High-frequency/high-field electron paramagnetic resonance generalized spectroscopic ellipsometry characterization of Cr3+ in β-Ga2O3
- Contribution to journal › Article
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Mark
Growth of non-polar and semi-polar GaN on sapphire substrates by magnetron sputter epitaxy
- Contribution to journal › Article
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Mark
Chemical reaction mechanism between trimethylgallium and oxygen for β-gallium oxide growth: Thermodynamic and experimental studies
- Contribution to journal › Article
