C3NiT: Centre for III nitride technology
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- 2026
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Mark
Spectral Tuning of Hyperbolic Shear Polaritons in Monoclinic Gallium Oxide via Isotopic Substitution
- Contribution to journal › Article
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Mark
Impact of AlN buffer thickness on electrical and thermal characteristics of AlGaN/GaN/AlN HEMTs
- Contribution to journal › Article
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Mark
Periodic Inversion Domains on Step-Flow Surfaces of N-Polar GaN Grown on m-Plane Offcut 4H-SiC(0001̅)
- Contribution to journal › Article
- 2025
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Mark
High-frequency/high-field electron paramagnetic resonance generalized spectroscopic ellipsometry characterization of Cr3+ in β-Ga2O3
- Contribution to journal › Article
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Mark
Simulating Scaling Effects in Fully Vertical GaN FinFETs
- Contribution to journal › Article
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Mark
Growth of non-polar and semi-polar GaN on sapphire substrates by magnetron sputter epitaxy
- Contribution to journal › Article
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Mark
Self-induced nonreciprocity from asymmetric photonic topological insulators
- Contribution to journal › Article
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Mark
Strain-stress relationships for coherent in-plane strain in heterostructures with monoclinic crystal systems : β-(AlxGa1−x)2O3 on (h0l)β-Ga2O3 as example
- Contribution to journal › Article
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Mark
2DEG Properties of AlScN/GaN and AlYN/GaN HEMTs Determined by Terahertz Optical Hall Effect
- Contribution to journal › Article
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Mark
Chemical reaction mechanism between trimethylgallium and oxygen for β-gallium oxide growth: Thermodynamic and experimental studies
- Contribution to journal › Article
