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Chemical reaction mechanism between trimethylgallium and oxygen for β-gallium oxide growth: Thermodynamic and experimental studies

Goto, Ken LU orcid ; Dhora, Andri LU orcid ; Schubert, Mathias LU orcid ; Gogova, Daniela and Darakchieva, Vanya LU (2025) In Journal of Applied Physics 138(9). p.095305-095305
Abstract
The metalorganic chemical vapor deposition (MOCVD) dynamics of beta-gallium oxide (β-Ga2O3) growth using trimethylgallium (TMGa) and oxygen as precursors were investigated through both theoretical thermodynamic analysis and experimental validation in a horizontal low-pressure hot-wall reactor. Thermodynamic analysis revealed that high-purity β-Ga2O3 can be grown through the complete combustion of TMG-derived gallium and hydrocarbons. Furthermore, the complete combustion of intentionally supplied hydrogen into the growth system also prevents the degradation of β-Ga2O3 growth. Therefore, a high input VI/III ratio that ensures full combustion of gaseous species in the growth system is preferred for β-Ga2O3 MOCVD. The growth experiments were... (More)
The metalorganic chemical vapor deposition (MOCVD) dynamics of beta-gallium oxide (β-Ga2O3) growth using trimethylgallium (TMGa) and oxygen as precursors were investigated through both theoretical thermodynamic analysis and experimental validation in a horizontal low-pressure hot-wall reactor. Thermodynamic analysis revealed that high-purity β-Ga2O3 can be grown through the complete combustion of TMG-derived gallium and hydrocarbons. Furthermore, the complete combustion of intentionally supplied hydrogen into the growth system also prevents the degradation of β-Ga2O3 growth. Therefore, a high input VI/III ratio that ensures full combustion of gaseous species in the growth system is preferred for β-Ga2O3 MOCVD. The growth experiments were performed on 2-in. sapphire substrates under an input VI/III ratio of 250. β-Ga2O3 growth was confirmed at growth temperatures between 740 and 950 °C, with the growth rate decreasing from 0.7 to 0.5 μm/h as temperature increased. Thermodynamic analysis successfully reproduced this growth behavior under the effective VI/III ratio of 6.5. The results demonstrate that β-Ga2O3 MOCVD occurred under thermal equilibrium conditions and was thermodynamically controllable. (Less)
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author
; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Journal of Applied Physics
volume
138
issue
9
pages
095305 - 095305
publisher
American Institute of Physics (AIP)
external identifiers
  • scopus:105015142519
ISSN
0021-8979
DOI
10.1063/5.0280430
language
English
LU publication?
yes
id
1aa8c740-fafc-4b37-9b6c-7b9c92e1e946
date added to LUP
2025-09-04 10:10:57
date last changed
2025-11-18 04:00:58
@article{1aa8c740-fafc-4b37-9b6c-7b9c92e1e946,
  abstract     = {{The metalorganic chemical vapor deposition (MOCVD) dynamics of beta-gallium oxide (β-Ga2O3) growth using trimethylgallium (TMGa) and oxygen as precursors were investigated through both theoretical thermodynamic analysis and experimental validation in a horizontal low-pressure hot-wall reactor. Thermodynamic analysis revealed that high-purity β-Ga2O3 can be grown through the complete combustion of TMG-derived gallium and hydrocarbons. Furthermore, the complete combustion of intentionally supplied hydrogen into the growth system also prevents the degradation of β-Ga2O3 growth. Therefore, a high input VI/III ratio that ensures full combustion of gaseous species in the growth system is preferred for β-Ga2O3 MOCVD. The growth experiments were performed on 2-in. sapphire substrates under an input VI/III ratio of 250. β-Ga2O3 growth was confirmed at growth temperatures between 740 and 950 °C, with the growth rate decreasing from 0.7 to 0.5 μm/h as temperature increased. Thermodynamic analysis successfully reproduced this growth behavior under the effective VI/III ratio of 6.5. The results demonstrate that β-Ga2O3 MOCVD occurred under thermal equilibrium conditions and was thermodynamically controllable.}},
  author       = {{Goto, Ken and Dhora, Andri and Schubert, Mathias and Gogova, Daniela and Darakchieva, Vanya}},
  issn         = {{0021-8979}},
  language     = {{eng}},
  month        = {{09}},
  number       = {{9}},
  pages        = {{095305--095305}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Journal of Applied Physics}},
  title        = {{Chemical reaction mechanism between trimethylgallium and oxygen for β-gallium oxide growth: Thermodynamic and experimental studies}},
  url          = {{http://dx.doi.org/10.1063/5.0280430}},
  doi          = {{10.1063/5.0280430}},
  volume       = {{138}},
  year         = {{2025}},
}