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- 2024
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Mark
Terahertz permittivity parameters of monoclinic single crystal lutetium oxyorthosilicate
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- Contribution to journal › Article
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Mark
Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect
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- Contribution to journal › Article
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Mark
Electron effective mass in GaN revisited : New insights from terahertz and mid-infrared optical Hall effect
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- Contribution to journal › Article
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Mark
Effective uniaxial dielectric function tensor and optical phonons in (2 ¯ 01)-oriented β - Ga2 O3 films with equally distributed sixfold-rotation domains
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- Contribution to journal › Article
- 2023
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Mark
High-quality N-polar GaN optimization by multi-step temperature growth process
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- Contribution to journal › Article
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Mark
Polarity Control by Inversion Domain Suppression in N-Polar III-Nitride Heterostructures
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- Contribution to journal › Article
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Mark
Room temperature two-dimensional electron gas scattering time, effective mass, and mobility parameters in AlxGa1−xN/GaN heterostructures (0.07 ≤ x ≤ 0.42)
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- Contribution to journal › Article
- 2022
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Mark
Mg segregation at inclined facets of pyramidal inversion domains in GaN:Mg
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- Contribution to journal › Article
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Mark
Incorporation of Magnesium into GaN Regulated by Intentionally Large Amounts of Hydrogen during Growth by MOCVD
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- Contribution to journal › Article
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Mark
On the polarity determination and polarity inversion in nitrogen-polar group III-nitride layers grown on SiC
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- Contribution to journal › Article