Mg segregation at inclined facets of pyramidal inversion domains in GaN:Mg
(2022) In Scientific Reports 12(1).- Abstract
- Structural defects in Mg-doped GaN were analyzed using high-resolution scanning transmission electron microscopy combined with electron energy loss spectroscopy. The defects, in the shape of inverted pyramids, appear at high concentrations of incorporated Mg, which also lead to a reduction in free-hole concentration in Mg doped GaN. Detailed analysis pinpoints the arrangement of atoms in and around the defects and verify the presence of a well-defined layer of Mg at all facets, including the inclined facets. Our observations have resulted in a model of the pyramid-shaped defect, including structural displacements and compositional replacements, which is verified by image simulations. Finally, the total concentration of Mg atoms bound to... (More)
- Structural defects in Mg-doped GaN were analyzed using high-resolution scanning transmission electron microscopy combined with electron energy loss spectroscopy. The defects, in the shape of inverted pyramids, appear at high concentrations of incorporated Mg, which also lead to a reduction in free-hole concentration in Mg doped GaN. Detailed analysis pinpoints the arrangement of atoms in and around the defects and verify the presence of a well-defined layer of Mg at all facets, including the inclined facets. Our observations have resulted in a model of the pyramid-shaped defect, including structural displacements and compositional replacements, which is verified by image simulations. Finally, the total concentration of Mg atoms bound to these defects were evaluated, enabling a correlation between inactive and defect-bound dopants. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/691f250d-5d94-40f6-a7e4-45229ded5bee
- author
- Person, Axel ; Papamichail, Alexis ; Darakchieva, Vanya LU and Persson, Per
- organization
- publishing date
- 2022
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Scientific Reports
- volume
- 12
- issue
- 1
- article number
- 17987
- publisher
- Nature Publishing Group
- external identifiers
-
- scopus:85140711851
- pmid:36289429
- ISSN
- 2045-2322
- DOI
- 10.1038/s41598-022-22622-1
- language
- English
- LU publication?
- yes
- id
- 691f250d-5d94-40f6-a7e4-45229ded5bee
- date added to LUP
- 2022-12-05 16:13:48
- date last changed
- 2023-11-21 13:30:08
@article{691f250d-5d94-40f6-a7e4-45229ded5bee,
abstract = {{Structural defects in Mg-doped GaN were analyzed using high-resolution scanning transmission electron microscopy combined with electron energy loss spectroscopy. The defects, in the shape of inverted pyramids, appear at high concentrations of incorporated Mg, which also lead to a reduction in free-hole concentration in Mg doped GaN. Detailed analysis pinpoints the arrangement of atoms in and around the defects and verify the presence of a well-defined layer of Mg at all facets, including the inclined facets. Our observations have resulted in a model of the pyramid-shaped defect, including structural displacements and compositional replacements, which is verified by image simulations. Finally, the total concentration of Mg atoms bound to these defects were evaluated, enabling a correlation between inactive and defect-bound dopants.}},
author = {{Person, Axel and Papamichail, Alexis and Darakchieva, Vanya and Persson, Per}},
issn = {{2045-2322}},
language = {{eng}},
number = {{1}},
publisher = {{Nature Publishing Group}},
series = {{Scientific Reports}},
title = {{Mg segregation at inclined facets of pyramidal inversion domains in GaN:Mg}},
url = {{http://dx.doi.org/10.1038/s41598-022-22622-1}},
doi = {{10.1038/s41598-022-22622-1}},
volume = {{12}},
year = {{2022}},
}