Vanya Darakchieva

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2025
Mark High-frequency/high-field electron paramagnetic resonance generalized spectroscopic ellipsometry characterization of Cr³⁺ in β-Ga₂O₃
Rindert, Viktor ^LU ; Galazka, Zbigniew ; Schubert, Mathias ^LU and Darakchieva, Vanya ^LU (2025) In Applied Physics Letters 126(8).
- Contribution to journal › Article
Mark Magnetic Lyddane-Sachs-Teller Relation
Rindert, Viktor ^LU ; Darakchieva, Vanya ^LU ; Sarkar, Tapati and Schubert, Mathias ^LU (2025) In Physical Review Letters 134(8).
- Contribution to journal › Article
Mark Effect of substrate misorientation angle on the structural properties of N-polar GaN grown by hot-wall MOCVD on 4H-SiC(0001̄)
Zhang, Hengfang ; Chen, Jr Tai ; Papamichail, Alexis ; Persson, Ingemar ; Tran, Dat Q. ; Paskov, Plamen P. and Darakchieva, Vanya ^LU (2025) In Journal of Crystal Growth 651.
- Contribution to journal › Article
Mark Growth of non-polar and semi-polar GaN on sapphire substrates by magnetron sputter epitaxy
Pingen, Katrin ; Wolff, Niklas ; Hinz, Alexander M. ; Sandström, Per ; Beuer, Susanne ; Kienle, Lorenz ; Darakchieva, Vanya ^LU ; Hultman, Lars ; Birch, Jens and Hsiao, Ching Lien (2025) In Applied Surface Science Advances 26.
- Contribution to journal › Article
2024
Mark Terahertz permittivity parameters of monoclinic single crystal lutetium oxyorthosilicate
Knight, Sean ^LU ; Richter, Steffen ^LU ; Papamichail, Alexis ; Stokey, Megan ; Korlacki, Rafał ; Stanishev, Vallery ; Kühne, Philipp ; Schubert, Mathias ^LU and Darakchieva, Vanya ^LU (2024) In Applied Physics Letters 124(3).
- Contribution to journal › Article
Mark High crystalline quality homoepitaxial Si-doped β-Ga₂O₃(010) layers with reduced structural anisotropy grown by hot-wall MOCVD
Gogova, D. ; Tran, D. Q. ; Stanishev, V. ; Jokubavicius, V. ; Vines, L. ; Schubert, M. ^LU ; Yakimova, R. ; Paskov, P. P. and Darakchieva, V. ^LU (2024) In Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 42(2).
- Contribution to journal › Article
Mark Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs
Castillo, Ragnar Ferrand Drake Del ; Chen, Ding Yuan ; Chen, Jr Tai ; Thorsell, Mattias ; Darakchieva, Vanya ^LU and Rorsman, Niklas (2024) In IEEE Transactions on Electron Devices 71(6). p.3596-3602
- Contribution to journal › Article
Mark COMPREHENSIVE SEMICONDUCTOR SCIENCE AND TECHNOLOGY, SECOND EDITION : Volumes 1-3
Fornari, Roberto ; Grundmann, Marius ; Darakchieva, Vanya ^LU and Fay, Patrick (2024) 1-3.
- Book/Report › Book
Mark The Role of Optical Phonon Confinement in the Infrared Dielectric Response of III–V Superlattices
Matson, Joseph R. ; Alam, Md Nazmul ; Varnavides, Georgios ; Sohr, Patrick ; Knight, Sean ^LU ; Darakchieva, Vanya ^LU ; Stokey, Megan ; Schubert, Mathias ^LU ; Said, Ayman and Beechem, Thomas , et al. (2024) In Advanced Materials 36(3).
- Contribution to journal › Article
Mark Switchable Broadband Terahertz Absorbers Based on Conducting Polymer-Cellulose Aerogels
Kuang, Chaoyang ; Chen, Shangzhi ; Luo, Min ; Zhang, Qilun ; Sun, Xiao ; Han, Shaobo ; Wang, Qingqing ; Stanishev, Vallery ; Darakchieva, Vanya ^LU and Crispin, Reverant , et al. (2024) In Advanced Science 11(3).
- Contribution to journal › Article

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