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- 2023
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Mark
Low Al-content n-type AlxGa1−xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition
(
- Contribution to journal › Article
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Mark
Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization
(
- Contribution to journal › Article
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Mark
Observations of very fast electron traps at SiC/high-κ dielectric interfaces
(
- Contribution to journal › Article
- 2022
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Mark
Compositionally graded channel HEMTs towards improved linearity for low-noise RF amplifiers
2022) 2022 Compound Semiconductor Week, CSW 2022(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance
(
- Contribution to journal › Article