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- 2023
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Mark
Low Al-content n-type AlxGa1−xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition
(
- Contribution to journal › Article
- 2022
-
Mark
Hot-Wall MOCVD for High-Quality Homoepitaxy of GaN : Understanding Nucleation and Design of Growth Strategies
(
- Contribution to journal › Article