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Low Al-content n-type AlxGa1−xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition

Stanishev, Vallery ; Armakavicius, Nerijus ; Gogova, Daniela ; Nawaz, Muhammad ; Rorsman, Niklas ; Paskov, Plamen P. and Darakchieva, Vanya LU (2023) In Vacuum 217.
Abstract

In this work, we demonstrate the capability of the hot-wall metalorganic chemical vapor deposition to deliver high-quality n-AlxGa1−xN (x = 0 – 0.12, [Si] = 1×1017 cm−3) epitaxial layers on 4H-SiC(0001). All layers are crack-free, with a very small root mean square roughness (0.13 – 0.25 nm), homogeneous distribution of Al over film thickness and a very low unintentional incorporation of oxygen at the detection limit of 5×1015 cm−3 and carbon of 2×1016 cm−3. Edge type dislocations in the layers gradually increase with increasing Al content while screw dislocations only raise for x above 0.077. The room temperature electron mobility of the... (More)

In this work, we demonstrate the capability of the hot-wall metalorganic chemical vapor deposition to deliver high-quality n-AlxGa1−xN (x = 0 – 0.12, [Si] = 1×1017 cm−3) epitaxial layers on 4H-SiC(0001). All layers are crack-free, with a very small root mean square roughness (0.13 – 0.25 nm), homogeneous distribution of Al over film thickness and a very low unintentional incorporation of oxygen at the detection limit of 5×1015 cm−3 and carbon of 2×1016 cm−3. Edge type dislocations in the layers gradually increase with increasing Al content while screw dislocations only raise for x above 0.077. The room temperature electron mobility of the n-AlxGa1−xN remain in the range of 400 – 470 cm2/(V.s) for Al contents between 0.05 and 0.077 resulting in comparable or higher Baliga figure of merit with respect to GaN, and hence demonstrating their suitability for implementation as drift layers in power device applications. Further increase in Al content is found to result in significant deterioration of the electrical properties.

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author
; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
AlGaN, Electrical properties, GaN, MOCVD, Structural properties
in
Vacuum
volume
217
article number
112481
publisher
Elsevier
external identifiers
  • scopus:85168115015
ISSN
0042-207X
DOI
10.1016/j.vacuum.2023.112481
language
English
LU publication?
yes
id
e51deba1-e50c-45e8-866a-774e809e8620
date added to LUP
2023-09-20 10:50:34
date last changed
2023-11-21 22:27:15
@article{e51deba1-e50c-45e8-866a-774e809e8620,
  abstract     = {{<p>In this work, we demonstrate the capability of the hot-wall metalorganic chemical vapor deposition to deliver high-quality n-Al<sub>x</sub>Ga<sub>1−x</sub>N (x = 0 – 0.12, [Si] = 1×10<sup>17</sup> cm<sup>−3</sup>) epitaxial layers on 4H-SiC(0001). All layers are crack-free, with a very small root mean square roughness (0.13 – 0.25 nm), homogeneous distribution of Al over film thickness and a very low unintentional incorporation of oxygen at the detection limit of 5×10<sup>15</sup> cm<sup>−3</sup> and carbon of 2×10<sup>16</sup> cm<sup>−3</sup>. Edge type dislocations in the layers gradually increase with increasing Al content while screw dislocations only raise for x above 0.077. The room temperature electron mobility of the n-Al<sub>x</sub>Ga<sub>1−x</sub>N remain in the range of 400 – 470 cm<sup>2</sup>/(V.s) for Al contents between 0.05 and 0.077 resulting in comparable or higher Baliga figure of merit with respect to GaN, and hence demonstrating their suitability for implementation as drift layers in power device applications. Further increase in Al content is found to result in significant deterioration of the electrical properties.</p>}},
  author       = {{Stanishev, Vallery and Armakavicius, Nerijus and Gogova, Daniela and Nawaz, Muhammad and Rorsman, Niklas and Paskov, Plamen P. and Darakchieva, Vanya}},
  issn         = {{0042-207X}},
  keywords     = {{AlGaN; Electrical properties; GaN; MOCVD; Structural properties}},
  language     = {{eng}},
  publisher    = {{Elsevier}},
  series       = {{Vacuum}},
  title        = {{Low Al-content n-type Al<sub>x</sub>Ga<sub>1−x</sub>N layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition}},
  url          = {{http://dx.doi.org/10.1016/j.vacuum.2023.112481}},
  doi          = {{10.1016/j.vacuum.2023.112481}},
  volume       = {{217}},
  year         = {{2023}},
}