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2023
Mark Low Al-content n-type Al_xGa_1−xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition
Stanishev, Vallery ; Armakavicius, Nerijus ; Gogova, Daniela ; Nawaz, Muhammad ; Rorsman, Niklas ; Paskov, Plamen P. and Darakchieva, Vanya ^LU (2023) In Vacuum 217.
- Contribution to journal › Article
2021
Mark Coherently strained and dislocation-free architectured AlGaN/GaN submicron-sized structures
Khalilian, Maryam ^LU ; Persson, Axel ^LU ; Lindgren, David ^LU ; Rosén, Martin ^LU ; Lenrick, Filip ^LU ; Colvin, Jovana ^LU ; Ohlsson, B. Jonas ^LU ; Timm, Rainer ^LU ; Wallenberg, Reine ^LU and Samuelson, Lars ^LU , et al. (2021) In Nano Select n/a(n/a). p.1-14
- Contribution to journal › Article
2020
Mark Thermal conductivity of ultra-wide bandgap thin layers – High Al-content AlGaN and β-Ga₂O₃
Tran, Dat Q. ; Blumenschein, Nicholas ; Mock, Alyssa ; Sukkaew, Pitsiri ; Zhang, Hengfang ; Muth, John F. ; Paskova, Tania ; Paskov, Plamen P. and Darakchieva, Vanya ^LU (2020) In Physica B: Condensed Matter 579.
- Contribution to journal › Article
1998
Mark Cathodoluminescence Studies of Quantum Structures and III-V nitrides
Petersson, Anders ^LU (1998)
- Thesis › Doctoral thesis (compilation)

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