Thermal conductivity of ultra-wide bandgap thin layers – High Al-content AlGaN and β-Ga2O3
(2020) In Physica B: Condensed Matter 579.- Abstract
Transient thermoreflectance (TTR) technique is employed to study the thermal conductivity of β-Ga2O3 and high Al-content AlxGa1-xN semiconductors, which are very promising materials for high-power device applications. The experimental data are analyzed with the Callaway's model taking into account all relevant phonon scattering processes. Our results show that out-of-plane thermal conductivity of high Al-content AlxGa1-xN and (−201) β-Ga2O3 is of the same order of magnitude and approximately one order lower than that of GaN or AlN. The low thermal conductivity is attributed to the dominant phonon-alloy scattering in AlxGa1-xN... (More)
Transient thermoreflectance (TTR) technique is employed to study the thermal conductivity of β-Ga2O3 and high Al-content AlxGa1-xN semiconductors, which are very promising materials for high-power device applications. The experimental data are analyzed with the Callaway's model taking into account all relevant phonon scattering processes. Our results show that out-of-plane thermal conductivity of high Al-content AlxGa1-xN and (−201) β-Ga2O3 is of the same order of magnitude and approximately one order lower than that of GaN or AlN. The low thermal conductivity is attributed to the dominant phonon-alloy scattering in AlxGa1-xN and to the strong Umklapp phonon-phonon scattering in β-Ga2O3. It is also found that the phonon-boundary scattering is essential in thin β-Ga2O3 and AlxGa1-xN layers even at high temperatures and the thermal conductivity strongly deviates from the common 1/T temperature dependence.
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- author
- Tran, Dat Q. ; Blumenschein, Nicholas ; Mock, Alyssa ; Sukkaew, Pitsiri ; Zhang, Hengfang ; Muth, John F. ; Paskova, Tania ; Paskov, Plamen P. and Darakchieva, Vanya LU
- publishing date
- 2020-02-15
- type
- Contribution to journal
- publication status
- published
- keywords
- AlGaN, GaO, Thermal conductivity
- in
- Physica B: Condensed Matter
- volume
- 579
- article number
- 411810
- publisher
- Elsevier
- external identifiers
-
- scopus:85075473541
- ISSN
- 0921-4526
- DOI
- 10.1016/j.physb.2019.411810
- language
- English
- LU publication?
- no
- additional info
- Publisher Copyright: © 2019 Elsevier B.V.
- id
- 96df62ab-2925-4b24-bcda-692602a75caa
- date added to LUP
- 2025-11-06 16:37:06
- date last changed
- 2025-11-11 15:28:46
@article{96df62ab-2925-4b24-bcda-692602a75caa,
abstract = {{<p>Transient thermoreflectance (TTR) technique is employed to study the thermal conductivity of β-Ga<sub>2</sub>O<sub>3</sub> and high Al-content Al<sub>x</sub>Ga<sub>1-x</sub>N semiconductors, which are very promising materials for high-power device applications. The experimental data are analyzed with the Callaway's model taking into account all relevant phonon scattering processes. Our results show that out-of-plane thermal conductivity of high Al-content Al<sub>x</sub>Ga<sub>1-x</sub>N and (−201) β-Ga<sub>2</sub>O<sub>3</sub> is of the same order of magnitude and approximately one order lower than that of GaN or AlN. The low thermal conductivity is attributed to the dominant phonon-alloy scattering in Al<sub>x</sub>Ga<sub>1-x</sub>N and to the strong Umklapp phonon-phonon scattering in β-Ga<sub>2</sub>O<sub>3</sub>. It is also found that the phonon-boundary scattering is essential in thin β-Ga<sub>2</sub>O<sub>3</sub> and Al<sub>x</sub>Ga<sub>1-x</sub>N layers even at high temperatures and the thermal conductivity strongly deviates from the common 1/T temperature dependence.</p>}},
author = {{Tran, Dat Q. and Blumenschein, Nicholas and Mock, Alyssa and Sukkaew, Pitsiri and Zhang, Hengfang and Muth, John F. and Paskova, Tania and Paskov, Plamen P. and Darakchieva, Vanya}},
issn = {{0921-4526}},
keywords = {{AlGaN; GaO; Thermal conductivity}},
language = {{eng}},
month = {{02}},
publisher = {{Elsevier}},
series = {{Physica B: Condensed Matter}},
title = {{Thermal conductivity of ultra-wide bandgap thin layers – High Al-content AlGaN and β-Ga<sub>2</sub>O<sub>3</sub>}},
url = {{http://dx.doi.org/10.1016/j.physb.2019.411810}},
doi = {{10.1016/j.physb.2019.411810}},
volume = {{579}},
year = {{2020}},
}