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Thermal conductivity of ultra-wide bandgap thin layers – High Al-content AlGaN and β-Ga2O3

Tran, Dat Q. ; Blumenschein, Nicholas ; Mock, Alyssa ; Sukkaew, Pitsiri ; Zhang, Hengfang ; Muth, John F. ; Paskova, Tania ; Paskov, Plamen P. and Darakchieva, Vanya LU (2020) In Physica B: Condensed Matter 579.
Abstract

Transient thermoreflectance (TTR) technique is employed to study the thermal conductivity of β-Ga2O3 and high Al-content AlxGa1-xN semiconductors, which are very promising materials for high-power device applications. The experimental data are analyzed with the Callaway's model taking into account all relevant phonon scattering processes. Our results show that out-of-plane thermal conductivity of high Al-content AlxGa1-xN and (−201) β-Ga2O3 is of the same order of magnitude and approximately one order lower than that of GaN or AlN. The low thermal conductivity is attributed to the dominant phonon-alloy scattering in AlxGa1-xN... (More)

Transient thermoreflectance (TTR) technique is employed to study the thermal conductivity of β-Ga2O3 and high Al-content AlxGa1-xN semiconductors, which are very promising materials for high-power device applications. The experimental data are analyzed with the Callaway's model taking into account all relevant phonon scattering processes. Our results show that out-of-plane thermal conductivity of high Al-content AlxGa1-xN and (−201) β-Ga2O3 is of the same order of magnitude and approximately one order lower than that of GaN or AlN. The low thermal conductivity is attributed to the dominant phonon-alloy scattering in AlxGa1-xN and to the strong Umklapp phonon-phonon scattering in β-Ga2O3. It is also found that the phonon-boundary scattering is essential in thin β-Ga2O3 and AlxGa1-xN layers even at high temperatures and the thermal conductivity strongly deviates from the common 1/T temperature dependence.

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author
; ; ; ; ; ; ; and
publishing date
type
Contribution to journal
publication status
published
keywords
AlGaN, GaO, Thermal conductivity
in
Physica B: Condensed Matter
volume
579
article number
411810
publisher
Elsevier
external identifiers
  • scopus:85075473541
ISSN
0921-4526
DOI
10.1016/j.physb.2019.411810
language
English
LU publication?
no
additional info
Publisher Copyright: © 2019 Elsevier B.V.
id
96df62ab-2925-4b24-bcda-692602a75caa
date added to LUP
2025-11-06 16:37:06
date last changed
2025-11-11 15:28:46
@article{96df62ab-2925-4b24-bcda-692602a75caa,
  abstract     = {{<p>Transient thermoreflectance (TTR) technique is employed to study the thermal conductivity of β-Ga<sub>2</sub>O<sub>3</sub> and high Al-content Al<sub>x</sub>Ga<sub>1-x</sub>N semiconductors, which are very promising materials for high-power device applications. The experimental data are analyzed with the Callaway's model taking into account all relevant phonon scattering processes. Our results show that out-of-plane thermal conductivity of high Al-content Al<sub>x</sub>Ga<sub>1-x</sub>N and (−201) β-Ga<sub>2</sub>O<sub>3</sub> is of the same order of magnitude and approximately one order lower than that of GaN or AlN. The low thermal conductivity is attributed to the dominant phonon-alloy scattering in Al<sub>x</sub>Ga<sub>1-x</sub>N and to the strong Umklapp phonon-phonon scattering in β-Ga<sub>2</sub>O<sub>3</sub>. It is also found that the phonon-boundary scattering is essential in thin β-Ga<sub>2</sub>O<sub>3</sub> and Al<sub>x</sub>Ga<sub>1-x</sub>N layers even at high temperatures and the thermal conductivity strongly deviates from the common 1/T temperature dependence.</p>}},
  author       = {{Tran, Dat Q. and Blumenschein, Nicholas and Mock, Alyssa and Sukkaew, Pitsiri and Zhang, Hengfang and Muth, John F. and Paskova, Tania and Paskov, Plamen P. and Darakchieva, Vanya}},
  issn         = {{0921-4526}},
  keywords     = {{AlGaN; GaO; Thermal conductivity}},
  language     = {{eng}},
  month        = {{02}},
  publisher    = {{Elsevier}},
  series       = {{Physica B: Condensed Matter}},
  title        = {{Thermal conductivity of ultra-wide bandgap thin layers – High Al-content AlGaN and β-Ga<sub>2</sub>O<sub>3</sub>}},
  url          = {{http://dx.doi.org/10.1016/j.physb.2019.411810}},
  doi          = {{10.1016/j.physb.2019.411810}},
  volume       = {{579}},
  year         = {{2020}},
}