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Observations of very fast electron traps at SiC/high-κ dielectric interfaces

Vidarsson, Arnar M. ; Persson, Axel R. ; Chen, Jr Tai ; Haasmann, Daniel ; Hassan, Jawad Ul ; Dimitrijev, Sima ; Rorsman, Niklas ; Darakchieva, Vanya LU and Sveinbjörnsson, Einar I. (2023) In APL Materials 11(11).
Abstract

Very fast interface traps have recently been suggested to be the main cause behind poor channel-carrier mobility in SiC metal-oxide-semiconductor field effect transistors. It has been hypothesized that the NI traps are defects located inside the SiO2 dielectric with energy levels close to the SiC conduction band edge and the observed conductance spectroscopy signal is a result of electron tunneling to and from these defects. Using aluminum nitride and aluminum oxide as gate dielectrics instead of SiO2, we detect NI traps at these SiC/dielectric interfaces as well. A detailed investigation of the NI trap density and behavior as a function of temperature is presented and discussed. Advanced scanning transmission... (More)

Very fast interface traps have recently been suggested to be the main cause behind poor channel-carrier mobility in SiC metal-oxide-semiconductor field effect transistors. It has been hypothesized that the NI traps are defects located inside the SiO2 dielectric with energy levels close to the SiC conduction band edge and the observed conductance spectroscopy signal is a result of electron tunneling to and from these defects. Using aluminum nitride and aluminum oxide as gate dielectrics instead of SiO2, we detect NI traps at these SiC/dielectric interfaces as well. A detailed investigation of the NI trap density and behavior as a function of temperature is presented and discussed. Advanced scanning transmission electron microscopy in combination with electron energy loss spectroscopy reveals no SiO2 at the interfaces. This strongly suggests that the NI traps are related to the surface region of the SiC rather than being a property of the gate dielectric.

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author
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organization
publishing date
type
Contribution to journal
publication status
published
subject
in
APL Materials
volume
11
issue
11
article number
111121
publisher
American Institute of Physics (AIP)
external identifiers
  • scopus:85177741012
ISSN
2166-532X
DOI
10.1063/5.0160287
language
English
LU publication?
yes
id
7598a01f-1b64-4f69-a493-0ab05cc8b7fd
date added to LUP
2024-01-02 13:27:16
date last changed
2024-01-02 13:28:17
@article{7598a01f-1b64-4f69-a493-0ab05cc8b7fd,
  abstract     = {{<p>Very fast interface traps have recently been suggested to be the main cause behind poor channel-carrier mobility in SiC metal-oxide-semiconductor field effect transistors. It has been hypothesized that the NI traps are defects located inside the SiO<sub>2</sub> dielectric with energy levels close to the SiC conduction band edge and the observed conductance spectroscopy signal is a result of electron tunneling to and from these defects. Using aluminum nitride and aluminum oxide as gate dielectrics instead of SiO<sub>2</sub>, we detect NI traps at these SiC/dielectric interfaces as well. A detailed investigation of the NI trap density and behavior as a function of temperature is presented and discussed. Advanced scanning transmission electron microscopy in combination with electron energy loss spectroscopy reveals no SiO<sub>2</sub> at the interfaces. This strongly suggests that the NI traps are related to the surface region of the SiC rather than being a property of the gate dielectric.</p>}},
  author       = {{Vidarsson, Arnar M. and Persson, Axel R. and Chen, Jr Tai and Haasmann, Daniel and Hassan, Jawad Ul and Dimitrijev, Sima and Rorsman, Niklas and Darakchieva, Vanya and Sveinbjörnsson, Einar I.}},
  issn         = {{2166-532X}},
  language     = {{eng}},
  month        = {{11}},
  number       = {{11}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{APL Materials}},
  title        = {{Observations of very fast electron traps at SiC/high-κ dielectric interfaces}},
  url          = {{http://dx.doi.org/10.1063/5.0160287}},
  doi          = {{10.1063/5.0160287}},
  volume       = {{11}},
  year         = {{2023}},
}