Observations of very fast electron traps at SiC/high-κ dielectric interfaces
(2023) In APL Materials 11(11).- Abstract
Very fast interface traps have recently been suggested to be the main cause behind poor channel-carrier mobility in SiC metal-oxide-semiconductor field effect transistors. It has been hypothesized that the NI traps are defects located inside the SiO2 dielectric with energy levels close to the SiC conduction band edge and the observed conductance spectroscopy signal is a result of electron tunneling to and from these defects. Using aluminum nitride and aluminum oxide as gate dielectrics instead of SiO2, we detect NI traps at these SiC/dielectric interfaces as well. A detailed investigation of the NI trap density and behavior as a function of temperature is presented and discussed. Advanced scanning transmission... (More)
Very fast interface traps have recently been suggested to be the main cause behind poor channel-carrier mobility in SiC metal-oxide-semiconductor field effect transistors. It has been hypothesized that the NI traps are defects located inside the SiO2 dielectric with energy levels close to the SiC conduction band edge and the observed conductance spectroscopy signal is a result of electron tunneling to and from these defects. Using aluminum nitride and aluminum oxide as gate dielectrics instead of SiO2, we detect NI traps at these SiC/dielectric interfaces as well. A detailed investigation of the NI trap density and behavior as a function of temperature is presented and discussed. Advanced scanning transmission electron microscopy in combination with electron energy loss spectroscopy reveals no SiO2 at the interfaces. This strongly suggests that the NI traps are related to the surface region of the SiC rather than being a property of the gate dielectric.
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- author
- Vidarsson, Arnar M. ; Persson, Axel R. ; Chen, Jr Tai ; Haasmann, Daniel ; Hassan, Jawad Ul ; Dimitrijev, Sima ; Rorsman, Niklas ; Darakchieva, Vanya LU and Sveinbjörnsson, Einar I.
- organization
- publishing date
- 2023-11-01
- type
- Contribution to journal
- publication status
- published
- subject
- in
- APL Materials
- volume
- 11
- issue
- 11
- article number
- 111121
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- scopus:85177741012
- ISSN
- 2166-532X
- DOI
- 10.1063/5.0160287
- language
- English
- LU publication?
- yes
- id
- 7598a01f-1b64-4f69-a493-0ab05cc8b7fd
- date added to LUP
- 2024-01-02 13:27:16
- date last changed
- 2024-01-02 13:28:17
@article{7598a01f-1b64-4f69-a493-0ab05cc8b7fd, abstract = {{<p>Very fast interface traps have recently been suggested to be the main cause behind poor channel-carrier mobility in SiC metal-oxide-semiconductor field effect transistors. It has been hypothesized that the NI traps are defects located inside the SiO<sub>2</sub> dielectric with energy levels close to the SiC conduction band edge and the observed conductance spectroscopy signal is a result of electron tunneling to and from these defects. Using aluminum nitride and aluminum oxide as gate dielectrics instead of SiO<sub>2</sub>, we detect NI traps at these SiC/dielectric interfaces as well. A detailed investigation of the NI trap density and behavior as a function of temperature is presented and discussed. Advanced scanning transmission electron microscopy in combination with electron energy loss spectroscopy reveals no SiO<sub>2</sub> at the interfaces. This strongly suggests that the NI traps are related to the surface region of the SiC rather than being a property of the gate dielectric.</p>}}, author = {{Vidarsson, Arnar M. and Persson, Axel R. and Chen, Jr Tai and Haasmann, Daniel and Hassan, Jawad Ul and Dimitrijev, Sima and Rorsman, Niklas and Darakchieva, Vanya and Sveinbjörnsson, Einar I.}}, issn = {{2166-532X}}, language = {{eng}}, month = {{11}}, number = {{11}}, publisher = {{American Institute of Physics (AIP)}}, series = {{APL Materials}}, title = {{Observations of very fast electron traps at SiC/high-κ dielectric interfaces}}, url = {{http://dx.doi.org/10.1063/5.0160287}}, doi = {{10.1063/5.0160287}}, volume = {{11}}, year = {{2023}}, }