Compositionally graded channel HEMTs towards improved linearity for low-noise RF amplifiers
(2022) 2022 Compound Semiconductor Week, CSW 2022- Abstract
Although AlGaN/GaN HEMTs with high power and current gain have been demonstrated in RF device applications, at high signal operation they show an inherent non-linear behavior which leads to gain compression and signal distortion. Polarization-doped AlGaN/GaN HEMTs, with a compositionally graded channel enables a linear response improvement through formation of a 3-D electron gas. In this work, we develop the growth process for graded channel HEMTs in a hot-wall MOCVD reactor. Control of the grading profile is established through growth parameter tuning. Afterwards, analysis by EDS allows for precise determination of Al composition across the channel. Conventional and graded channel HEMT structures were fabricated and characterized.... (More)
Although AlGaN/GaN HEMTs with high power and current gain have been demonstrated in RF device applications, at high signal operation they show an inherent non-linear behavior which leads to gain compression and signal distortion. Polarization-doped AlGaN/GaN HEMTs, with a compositionally graded channel enables a linear response improvement through formation of a 3-D electron gas. In this work, we develop the growth process for graded channel HEMTs in a hot-wall MOCVD reactor. Control of the grading profile is established through growth parameter tuning. Afterwards, analysis by EDS allows for precise determination of Al composition across the channel. Conventional and graded channel HEMT structures were fabricated and characterized. Furthermore, the sheet resistance, carrier density and mobility in HEMT structures with different grading profiles are compared and discussed. The conventional (non-graded) structure revealed the highest electron mobility of ~2350 cm2/V.s, which is among the highest values reported.
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- author
- Papamichail, Alexis ; Persson, Axel R. ; Ricther, Steffen ; Kuhne, Philipp ; Persson, Per O.A. ; Thorsell, Mattias ; Hjelmgren, Hans ; Rorsman, Niklas and Darakchieva, Vanya LU
- organization
- publishing date
- 2022
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- graded channel HEMTs, polarization doping, RF devices
- host publication
- 2022 Compound Semiconductor Week, CSW 2022
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- 2022 Compound Semiconductor Week, CSW 2022
- conference location
- Ann Arbor, United States
- conference dates
- 2022-06-01 - 2022-06-03
- external identifiers
-
- scopus:85142540487
- ISBN
- 9781665453400
- DOI
- 10.1109/CSW55288.2022.9930457
- language
- English
- LU publication?
- yes
- id
- 6d2f6c7a-1370-4ec5-a951-1f5cc5d25969
- date added to LUP
- 2022-12-21 16:04:18
- date last changed
- 2023-11-21 14:28:16
@inproceedings{6d2f6c7a-1370-4ec5-a951-1f5cc5d25969, abstract = {{<p>Although AlGaN/GaN HEMTs with high power and current gain have been demonstrated in RF device applications, at high signal operation they show an inherent non-linear behavior which leads to gain compression and signal distortion. Polarization-doped AlGaN/GaN HEMTs, with a compositionally graded channel enables a linear response improvement through formation of a 3-D electron gas. In this work, we develop the growth process for graded channel HEMTs in a hot-wall MOCVD reactor. Control of the grading profile is established through growth parameter tuning. Afterwards, analysis by EDS allows for precise determination of Al composition across the channel. Conventional and graded channel HEMT structures were fabricated and characterized. Furthermore, the sheet resistance, carrier density and mobility in HEMT structures with different grading profiles are compared and discussed. The conventional (non-graded) structure revealed the highest electron mobility of ~2350 cm2/V.s, which is among the highest values reported.</p>}}, author = {{Papamichail, Alexis and Persson, Axel R. and Ricther, Steffen and Kuhne, Philipp and Persson, Per O.A. and Thorsell, Mattias and Hjelmgren, Hans and Rorsman, Niklas and Darakchieva, Vanya}}, booktitle = {{2022 Compound Semiconductor Week, CSW 2022}}, isbn = {{9781665453400}}, keywords = {{graded channel HEMTs; polarization doping; RF devices}}, language = {{eng}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, title = {{Compositionally graded channel HEMTs towards improved linearity for low-noise RF amplifiers}}, url = {{http://dx.doi.org/10.1109/CSW55288.2022.9930457}}, doi = {{10.1109/CSW55288.2022.9930457}}, year = {{2022}}, }