Polarity Control by Inversion Domain Suppression in N-Polar III-Nitride Heterostructures
(2023) In Crystal Growth and Design 23(2). p.1049-1056- Abstract
- Nitrogen-polar III-nitride heterostructures offer advantages over
metal-polar structures in high frequency and high power applications.
However, polarity control in III-nitrides is difficult to achieve as a
result of unintentional polarity inversion domains (IDs). Herein, we
present a comprehensive structural investigation with both atomic detail
and thermodynamic analysis of the polarity evolution in low- and
high-temperature AlN layers on on-axis and 4° off-axis carbon-face
4H-SiC (0001̅) grown by hot-wall metal organic chemical vapor
deposition. A polarity control strategy has been developed by variation
of thermodynamic Al supersaturation and substrate misorientation angle
in order to... (More) - Nitrogen-polar III-nitride heterostructures offer advantages over
metal-polar structures in high frequency and high power applications.
However, polarity control in III-nitrides is difficult to achieve as a
result of unintentional polarity inversion domains (IDs). Herein, we
present a comprehensive structural investigation with both atomic detail
and thermodynamic analysis of the polarity evolution in low- and
high-temperature AlN layers on on-axis and 4° off-axis carbon-face
4H-SiC (0001̅) grown by hot-wall metal organic chemical vapor
deposition. A polarity control strategy has been developed by variation
of thermodynamic Al supersaturation and substrate misorientation angle
in order to achieve the desired growth mode and polarity. We demonstrate
that IDs are completely suppressed for high-temperature AlN nucleation
layers when a step-flow growth mode is achieved on the off-axis
substrates. We employ this approach to demonstrate high quality N-polar
epitaxial AlGaN/GaN/AlN heterostructures. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/36fcc436-27b9-49e1-84b4-de6347561b70
- author
- Zhang, Hengfang ; Persson, Ingemar ; Chen Jr., Tai ; Papamichail, Alexis ; Tran, Dat Q. ; Persson, Per O. Å. ; Paskov, Plamen P. and Darakchieva, Vanya LU
- organization
- publishing date
- 2023-01
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- N-polar GaN, polarity, TEM, MOCVD
- in
- Crystal Growth and Design
- volume
- 23
- issue
- 2
- pages
- 8 pages
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- scopus:85146584823
- ISSN
- 1528-7483
- DOI
- 10.1021/acs.cgd.2c01199
- language
- English
- LU publication?
- yes
- id
- 36fcc436-27b9-49e1-84b4-de6347561b70
- date added to LUP
- 2023-02-12 14:55:46
- date last changed
- 2023-11-21 09:56:17
@article{36fcc436-27b9-49e1-84b4-de6347561b70, abstract = {{Nitrogen-polar III-nitride heterostructures offer advantages over <br> metal-polar structures in high frequency and high power applications. <br> However, polarity control in III-nitrides is difficult to achieve as a <br> result of unintentional polarity inversion domains (IDs). Herein, we <br> present a comprehensive structural investigation with both atomic detail<br> and thermodynamic analysis of the polarity evolution in low- and <br> high-temperature AlN layers on on-axis and 4° off-axis carbon-face <br> 4H-SiC (0001̅) grown by hot-wall metal organic chemical vapor <br> deposition. A polarity control strategy has been developed by variation <br> of thermodynamic Al supersaturation and substrate misorientation angle <br> in order to achieve the desired growth mode and polarity. We demonstrate<br> that IDs are completely suppressed for high-temperature AlN nucleation <br> layers when a step-flow growth mode is achieved on the off-axis <br> substrates. We employ this approach to demonstrate high quality N-polar <br> epitaxial AlGaN/GaN/AlN heterostructures.}}, author = {{Zhang, Hengfang and Persson, Ingemar and Chen Jr., Tai and Papamichail, Alexis and Tran, Dat Q. and Persson, Per O. Å. and Paskov, Plamen P. and Darakchieva, Vanya}}, issn = {{1528-7483}}, keywords = {{N-polar GaN; polarity; TEM; MOCVD}}, language = {{eng}}, number = {{2}}, pages = {{1049--1056}}, publisher = {{The American Chemical Society (ACS)}}, series = {{Crystal Growth and Design}}, title = {{Polarity Control by Inversion Domain Suppression in N-Polar III-Nitride Heterostructures}}, url = {{http://dx.doi.org/10.1021/acs.cgd.2c01199}}, doi = {{10.1021/acs.cgd.2c01199}}, volume = {{23}}, year = {{2023}}, }