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- 2024
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Mark
Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs
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- Contribution to journal › Article
- 2023
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Mark
High-quality N-polar GaN optimization by multi-step temperature growth process
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- Contribution to journal › Article
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Mark
Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization
(
- Contribution to journal › Article
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Mark
Polarity Control by Inversion Domain Suppression in N-Polar III-Nitride Heterostructures
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- Contribution to journal › Article
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Mark
Observations of very fast electron traps at SiC/high-κ dielectric interfaces
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- Contribution to journal › Article
- 2022
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Mark
Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance
(
- Contribution to journal › Article