Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs
(2024) In IEEE Transactions on Electron Devices- Abstract
- The impact of different carbon concentrations in the Al 0.06 Ga 0.94 N graded back-barrier and GaN buffer of high electron mobility transistors (HEMTs) is investigated. Four epi-wafers with different carbon concentrations, ranging from 1 × 10 17 to 5 × 10 17 cm −3 , were grown by metal organic chemical vapor deposition (MOCVD). HEMTs with 100 and 200 nm gate lengths were fabricated and characterized with dc, Pulsed-IV, drain current transient spectroscopy (DCTS), and large-signal measurements at 30 GHz. It is shown that the back-barrier effectively prevents buffer-related electron trapping. The highest C-doping provides the best 2DEG confinement, while lower carbon doping levels are beneficial for a high output power and efficiency.... (More)
- The impact of different carbon concentrations in the Al 0.06 Ga 0.94 N graded back-barrier and GaN buffer of high electron mobility transistors (HEMTs) is investigated. Four epi-wafers with different carbon concentrations, ranging from 1 × 10 17 to 5 × 10 17 cm −3 , were grown by metal organic chemical vapor deposition (MOCVD). HEMTs with 100 and 200 nm gate lengths were fabricated and characterized with dc, Pulsed-IV, drain current transient spectroscopy (DCTS), and large-signal measurements at 30 GHz. It is shown that the back-barrier effectively prevents buffer-related electron trapping. The highest C-doping provides the best 2DEG confinement, while lower carbon doping levels are beneficial for a high output power and efficiency. A C-doping of 1 × 10 17 cm −3 offers the highest output power at maximum power added efficiency (PAE) (1.8 W/mm), whereas 3 × 10 17 cm −3 doping provides the highest PAE ( > 40%). The C-profiles acquired by using secondary ion mass spectroscopy (SIMS), in combination with DCTS, is used to explain the electron trapping effects. Traps associated with the C-doping in the back-barrier are identified and the bias ranges for the trap activation are discussed. The study shows the importance of considering the C-doping level in the back-barrier of microwave GaN HEMTs for power amplification and generation. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/210b7968-e6b8-42bb-b01a-d10b21077303
- author
- Castillo, Ragnar Ferrand Drake Del ; Chen, Ding Yuan ; Chen, Jr Tai ; Thorsell, Mattias ; Darakchieva, Vanya LU and Rorsman, Niklas
- organization
- publishing date
- 2024
- type
- Contribution to journal
- publication status
- in press
- subject
- keywords
- AlGaN/GaN, Aluminum gallium nitride, back-barrier, dispersion, double heterostructure, Electrons, Epitaxial growth, HEMTs, high electron mobility transistors (HEMTs), Logic gates, MODFETs, short channel effect (SCE), Wide band gap semiconductors
- in
- IEEE Transactions on Electron Devices
- pages
- 2 pages
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- external identifiers
-
- scopus:85192168603
- ISSN
- 0018-9383
- DOI
- 10.1109/TED.2024.3392177
- language
- English
- LU publication?
- yes
- id
- 210b7968-e6b8-42bb-b01a-d10b21077303
- date added to LUP
- 2024-05-16 12:49:53
- date last changed
- 2024-05-17 07:57:53
@article{210b7968-e6b8-42bb-b01a-d10b21077303,
abstract = {{The impact of different carbon concentrations in the Al 0.06 Ga 0.94 N graded back-barrier and GaN buffer of high electron mobility transistors (HEMTs) is investigated. Four epi-wafers with different carbon concentrations, ranging from 1 × 10 17 to 5 × 10 17 cm −3 , were grown by metal organic chemical vapor deposition (MOCVD). HEMTs with 100 and 200 nm gate lengths were fabricated and characterized with dc, Pulsed-IV, drain current transient spectroscopy (DCTS), and large-signal measurements at 30 GHz. It is shown that the back-barrier effectively prevents buffer-related electron trapping. The highest C-doping provides the best 2DEG confinement, while lower carbon doping levels are beneficial for a high output power and efficiency. A C-doping of 1 × 10 17 cm −3 offers the highest output power at maximum power added efficiency (PAE) (1.8 W/mm), whereas 3 × 10 17 cm −3 doping provides the highest PAE ( > 40%). The C-profiles acquired by using secondary ion mass spectroscopy (SIMS), in combination with DCTS, is used to explain the electron trapping effects. Traps associated with the C-doping in the back-barrier are identified and the bias ranges for the trap activation are discussed. The study shows the importance of considering the C-doping level in the back-barrier of microwave GaN HEMTs for power amplification and generation.}},
author = {{Castillo, Ragnar Ferrand Drake Del and Chen, Ding Yuan and Chen, Jr Tai and Thorsell, Mattias and Darakchieva, Vanya and Rorsman, Niklas}},
issn = {{0018-9383}},
keywords = {{AlGaN/GaN; Aluminum gallium nitride; back-barrier; dispersion; double heterostructure; Electrons; Epitaxial growth; HEMTs; high electron mobility transistors (HEMTs); Logic gates; MODFETs; short channel effect (SCE); Wide band gap semiconductors}},
language = {{eng}},
publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
series = {{IEEE Transactions on Electron Devices}},
title = {{Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs}},
url = {{http://dx.doi.org/10.1109/TED.2024.3392177}},
doi = {{10.1109/TED.2024.3392177}},
year = {{2024}},
}