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- 2024
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Mark
Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs
- Contribution to journal › Article
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Mark
Characterization of Drain-Induced Barrier Lowering in GaN HEMTs Using a Drain Current Injection Technique
- Contribution to journal › Article
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Mark
Cryogenic Evaluation of Resistive Random Access Memory With Enhanced Endurance at 14 K
(2024) In IEEE Transactions on Electron Devices
- Contribution to journal › Article
- 2023
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Mark
Impact of Temperature-Induced Oxide Defects on HfxZr1−xO2 Ferroelectric Tunnel Junction Memristor Performance
- Contribution to journal › Article
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Mark
Cryogenic Characteristics of InGaAs MOSFET
- Contribution to journal › Article
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Mark
Geometrical Magnetoresistance as a Tool for Carrier Mobility Extraction in InGaAs MOSFETs
- Contribution to journal › Article
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Mark
Capacitance and Mobility Evaluation for Normally-Off Fully-Vertical GaN FinFETs
- Contribution to journal › Article
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Mark
Tuning of Quasi-Vertical GaN FinFETs Fabricated on SiC Substrates
- Contribution to journal › Article
- 2022
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Mark
Performance, Analysis, and Modeling of III-V Vertical Nanowire MOSFETs on Si at Higher Voltages
- Contribution to journal › Article
- 2021
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Mark
Capacitance Scaling in In0.71Ga0.29As/InP MOSFETs with Self-Aligned a:Si Spacers
- Contribution to journal › Article
