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Cryogenic Characteristics of InGaAs MOSFET

Sodergren, L. LU ; Olausson, P. LU and Lind, E. LU (2023) In IEEE Transactions on Electron Devices 70(3). p.1226-1230
Abstract

We present an investigation of the
temperature dependence of the current characteristic of a long-channel
InGaAs quantum well MOSFET. A model is developed, which includes the
effects of band tail states, electron concentration-dependent mobility,
and interface trap density to accurately explain the measured data over
all modes of operation. The increased effect of remote impurity
scattering is associated with mobility degradation in the subthreshold
region. The device has been characterized down to 13 K, with a minimum
inverse subthreshold slope of 8 mV/dec and a maximum ON-state mobility
of 6700 cm /V s and with values of 75 mV/dec and 3000 cm /V s at room
temperature.

Please use this url to cite or link to this publication:
author
; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Band tail, charge carrier mobility, cryogenic electronics, InGaAs, MOSFETs
in
IEEE Transactions on Electron Devices
volume
70
issue
3
pages
5 pages
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • scopus:85148437834
ISSN
0018-9383
DOI
10.1109/TED.2023.3238382
project
III-V Devices for Emerging Electronic Applications
language
English
LU publication?
yes
id
e24b0cb6-e1b1-4ceb-93d9-7810b40cf3fb
date added to LUP
2023-03-07 14:48:16
date last changed
2024-01-17 14:20:56
@article{e24b0cb6-e1b1-4ceb-93d9-7810b40cf3fb,
  abstract     = {{<p>We present an investigation of the<br>
 temperature dependence of the current characteristic of a long-channel <br>
InGaAs quantum well MOSFET. A model is developed, which includes the <br>
effects of band tail states, electron concentration-dependent mobility, <br>
and interface trap density to accurately explain the measured data over <br>
all modes of operation. The increased effect of remote impurity <br>
scattering is associated with mobility degradation in the subthreshold <br>
region. The device has been characterized down to 13 K, with a minimum <br>
inverse subthreshold slope of 8 mV/dec and a maximum ON-state mobility <br>
of 6700 cm /V s and with values of 75 mV/dec and 3000 cm /V s at room <br>
temperature.</p>}},
  author       = {{Sodergren, L. and Olausson, P. and Lind, E.}},
  issn         = {{0018-9383}},
  keywords     = {{Band tail; charge carrier mobility; cryogenic electronics; InGaAs; MOSFETs}},
  language     = {{eng}},
  number       = {{3}},
  pages        = {{1226--1230}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  series       = {{IEEE Transactions on Electron Devices}},
  title        = {{Cryogenic Characteristics of InGaAs MOSFET}},
  url          = {{http://dx.doi.org/10.1109/TED.2023.3238382}},
  doi          = {{10.1109/TED.2023.3238382}},
  volume       = {{70}},
  year         = {{2023}},
}