1 – 10 of 13
- show: 10
- |
- sort: year (new to old)
Close
Embed this list
<iframe src=""
width=""
height=""
allowtransparency="true"
frameborder="0">
</iframe>
- 2023
-
Mark
Cryogenic Characteristics of InGaAs MOSFET
- Contribution to journal › Article
-
Mark
Self-Heating in Gate-All-Around Vertical III-V InAs/InGaAs MOSFETs
- Contribution to journal › Article
-
Mark
Low temperature atomic hydrogen annealing of InGaAs MOSFETs
- Contribution to journal › Article
- 2022
-
Mark
Performance, Analysis, and Modeling of III-V Vertical Nanowire MOSFETs on Si at Higher Voltages
- Contribution to journal › Article
- 2019
-
Mark
Comparison of Low-Frequency Noise in Nanowire and Planar III-V MOSFETs
(2019) Insulating Films on Semiconductors (INFOS)
- Contribution to conference › Paper, not in proceeding
- 2018
-
Mark
A Method for Determining Trap Distributions of Specific Channel Surfaces in InGaAs Tri-gate MOSFETs
- Contribution to journal › Article
- 2017
-
Mark
Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si
- Contribution to journal › Article
-
Mark
1/f and RTS noise in InGaAs nanowire MOSFETs
(2017) Conference on Insulating Films on Semiconductors (INFOS) In Microelectronic Engineering 178. p.52-55
- Contribution to journal › Article
-
Mark
1/f and RTS Noise in InGaAs Nanowire MOSFETs
(2017) Conference on Insulating Films on Semiconductors (INFOS)
- Contribution to conference › Paper, not in proceeding
- 2012
-
Mark
High-performance 15 nm diameter InAs nanowire Ω-gate MOSFETs
(2012) GigaHertz Symposium 2012
- Contribution to conference › Paper, not in proceeding
