Cezar Zota (Former)
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- 2020
-
Mark
Weyl Semi-Metal-Based High-Frequency Amplifiers
(2020) 65th Annual IEEE International Electron Devices Meeting, IEDM 2019 In Technical Digest - International Electron Devices Meeting, IEDM 2019-December.
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2018
-
Mark
A Method for Determining Trap Distributions of Specific Channel Surfaces in InGaAs Tri-gate MOSFETs
- Contribution to journal › Article
- 2017
-
Mark
1/f and RTS noise in InGaAs nanowire MOSFETs
(2017) Conference on Insulating Films on Semiconductors (INFOS) In Microelectronic Engineering 178. p.52-55
- Contribution to journal › Article
-
Mark
InGaAs tri-gate MOSFETs with record on-current
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
III-V MOSFETs for High-Frequency and Digital Applications
(2017)
- Thesis › Doctoral thesis (compilation)
-
Mark
First InGaAs lateral nanowire MOSFET RF noise measurements and model
(2017) 75th Annual Device Research Conference, DRC 2017
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Record performance for junctionless transistors in InGaAs MOSFETs
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Junctionless tri-gate InGaAs MOSFETs
- Contribution to journal › Article
-
Mark
1/f and RTS Noise in InGaAs Nanowire MOSFETs
(2017) Conference on Insulating Films on Semiconductors (INFOS)
- Contribution to conference › Paper, not in proceeding
-
Mark
Gated Hall effect measurements on selectively grown InGaAs nanowires
- Contribution to journal › Article
