Weyl Semi-Metal-Based High-Frequency Amplifiers
(2020) 65th Annual IEEE International Electron Devices Meeting, IEDM 2019 In Technical Digest - International Electron Devices Meeting, IEDM 2019-December.- Abstract
In this work, we propose and simulate a novel amplifier based on Weyl semi-metals, e.g. WP2 and MoP2. These topological materials have been shown to exhibit extremely large magnetoresistance at cryogenic conditions. In the proposed device, a gate current induces a local magnetic field which controls the resistivity of the Weyl semi-metal channel and the resulting output current. Simulations of the magnetic fields are performed to optimize the device design, as well as thermal modeling to determine self-heating effects. Device operation is simulated using an analytical 3D model of magnetic fields and resistivity, and a small-signal model. Results show that the proposed device can provide high gain (20-30 dB) with... (More)
In this work, we propose and simulate a novel amplifier based on Weyl semi-metals, e.g. WP2 and MoP2. These topological materials have been shown to exhibit extremely large magnetoresistance at cryogenic conditions. In the proposed device, a gate current induces a local magnetic field which controls the resistivity of the Weyl semi-metal channel and the resulting output current. Simulations of the magnetic fields are performed to optimize the device design, as well as thermal modeling to determine self-heating effects. Device operation is simulated using an analytical 3D model of magnetic fields and resistivity, and a small-signal model. Results show that the proposed device can provide high gain (20-30 dB) with extremely low DC power dissipation (40 μW) and high transition frequencies. This type of device is promising to replace HEMTs in quantum computers, where the low power dissipation enables it to be integrated at lower cryostat temperature stages.
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- author
- Toniato, A. ; Gotsmann, B. ; Lind, E. LU and Zota, C. B. LU
- organization
- publishing date
- 2020-02-13
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- host publication
- 2019 IEEE International Electron Devices Meeting, IEDM
- series title
- Technical Digest - International Electron Devices Meeting, IEDM
- volume
- 2019-December
- article number
- 8993575
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- 65th Annual IEEE International Electron Devices Meeting, IEDM 2019
- conference location
- San Francisco, United States
- conference dates
- 2019-12-07 - 2019-12-11
- external identifiers
-
- scopus:85081051149
- ISSN
- 2156-017X
- 0163-1918
- ISBN
- 978-1-7281-4033-9
- 9781728140315
- DOI
- 10.1109/IEDM19573.2019.8993575
- language
- English
- LU publication?
- yes
- id
- 7cbec8d1-628a-4080-8c4c-909a2c02ca24
- date added to LUP
- 2020-03-25 17:05:13
- date last changed
- 2024-08-21 19:02:06
@inproceedings{7cbec8d1-628a-4080-8c4c-909a2c02ca24, abstract = {{<p>In this work, we propose and simulate a novel amplifier based on Weyl semi-metals, e.g. WP<sub>2</sub> and MoP<sub>2</sub>. These topological materials have been shown to exhibit extremely large magnetoresistance at cryogenic conditions. In the proposed device, a gate current induces a local magnetic field which controls the resistivity of the Weyl semi-metal channel and the resulting output current. Simulations of the magnetic fields are performed to optimize the device design, as well as thermal modeling to determine self-heating effects. Device operation is simulated using an analytical 3D model of magnetic fields and resistivity, and a small-signal model. Results show that the proposed device can provide high gain (20-30 dB) with extremely low DC power dissipation (40 μW) and high transition frequencies. This type of device is promising to replace HEMTs in quantum computers, where the low power dissipation enables it to be integrated at lower cryostat temperature stages.</p>}}, author = {{Toniato, A. and Gotsmann, B. and Lind, E. and Zota, C. B.}}, booktitle = {{2019 IEEE International Electron Devices Meeting, IEDM}}, isbn = {{978-1-7281-4033-9}}, issn = {{2156-017X}}, language = {{eng}}, month = {{02}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, series = {{Technical Digest - International Electron Devices Meeting, IEDM}}, title = {{Weyl Semi-Metal-Based High-Frequency Amplifiers}}, url = {{http://dx.doi.org/10.1109/IEDM19573.2019.8993575}}, doi = {{10.1109/IEDM19573.2019.8993575}}, volume = {{2019-December}}, year = {{2020}}, }