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Weyl Semi-Metal-Based High-Frequency Amplifiers

Toniato, A. ; Gotsmann, B. ; Lind, E. LU orcid and Zota, C. B. LU (2020) 65th Annual IEEE International Electron Devices Meeting, IEDM 2019 In Technical Digest - International Electron Devices Meeting, IEDM 2019-December.
Abstract

In this work, we propose and simulate a novel amplifier based on Weyl semi-metals, e.g. WP2 and MoP2. These topological materials have been shown to exhibit extremely large magnetoresistance at cryogenic conditions. In the proposed device, a gate current induces a local magnetic field which controls the resistivity of the Weyl semi-metal channel and the resulting output current. Simulations of the magnetic fields are performed to optimize the device design, as well as thermal modeling to determine self-heating effects. Device operation is simulated using an analytical 3D model of magnetic fields and resistivity, and a small-signal model. Results show that the proposed device can provide high gain (20-30 dB) with... (More)

In this work, we propose and simulate a novel amplifier based on Weyl semi-metals, e.g. WP2 and MoP2. These topological materials have been shown to exhibit extremely large magnetoresistance at cryogenic conditions. In the proposed device, a gate current induces a local magnetic field which controls the resistivity of the Weyl semi-metal channel and the resulting output current. Simulations of the magnetic fields are performed to optimize the device design, as well as thermal modeling to determine self-heating effects. Device operation is simulated using an analytical 3D model of magnetic fields and resistivity, and a small-signal model. Results show that the proposed device can provide high gain (20-30 dB) with extremely low DC power dissipation (40 μW) and high transition frequencies. This type of device is promising to replace HEMTs in quantum computers, where the low power dissipation enables it to be integrated at lower cryostat temperature stages.

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author
; ; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
host publication
2019 IEEE International Electron Devices Meeting, IEDM
series title
Technical Digest - International Electron Devices Meeting, IEDM
volume
2019-December
article number
8993575
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
conference name
65th Annual IEEE International Electron Devices Meeting, IEDM 2019
conference location
San Francisco, United States
conference dates
2019-12-07 - 2019-12-11
external identifiers
  • scopus:85081051149
ISSN
2156-017X
0163-1918
ISBN
9781728140315
978-1-7281-4033-9
DOI
10.1109/IEDM19573.2019.8993575
language
English
LU publication?
yes
id
7cbec8d1-628a-4080-8c4c-909a2c02ca24
date added to LUP
2020-03-25 17:05:13
date last changed
2024-08-15 02:51:29
@inproceedings{7cbec8d1-628a-4080-8c4c-909a2c02ca24,
  abstract     = {{<p>In this work, we propose and simulate a novel amplifier based on Weyl semi-metals, e.g. WP<sub>2</sub> and MoP<sub>2</sub>. These topological materials have been shown to exhibit extremely large magnetoresistance at cryogenic conditions. In the proposed device, a gate current induces a local magnetic field which controls the resistivity of the Weyl semi-metal channel and the resulting output current. Simulations of the magnetic fields are performed to optimize the device design, as well as thermal modeling to determine self-heating effects. Device operation is simulated using an analytical 3D model of magnetic fields and resistivity, and a small-signal model. Results show that the proposed device can provide high gain (20-30 dB) with extremely low DC power dissipation (40 μW) and high transition frequencies. This type of device is promising to replace HEMTs in quantum computers, where the low power dissipation enables it to be integrated at lower cryostat temperature stages.</p>}},
  author       = {{Toniato, A. and Gotsmann, B. and Lind, E. and Zota, C. B.}},
  booktitle    = {{2019 IEEE International Electron Devices Meeting, IEDM}},
  isbn         = {{9781728140315}},
  issn         = {{2156-017X}},
  language     = {{eng}},
  month        = {{02}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  series       = {{Technical Digest - International Electron Devices Meeting, IEDM}},
  title        = {{Weyl Semi-Metal-Based High-Frequency Amplifiers}},
  url          = {{http://dx.doi.org/10.1109/IEDM19573.2019.8993575}},
  doi          = {{10.1109/IEDM19573.2019.8993575}},
  volume       = {{2019-December}},
  year         = {{2020}},
}