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First InGaAs lateral nanowire MOSFET RF noise measurements and model

Ohlsson, Lars LU ; Lindelow, Fredrik LU ; Zota, Cezar B. LU ; Ohlrogge, Matthias; Merkle, Thomas; Wernersson, Lars Erik LU and Lind, Erik LU (2017) 75th Annual Device Research Conference, DRC 2017 In 75th Annual Device Research Conference, DRC 2017
Abstract

The first radio frequency (RF) noise measurements on lateral nanowire metal-oxide-semiconductor field-effect transistors (MOSFETs) and a noise model are presented. We have characterized the RF noise and scattering parameters of an indium gallium arsenide (InGaAs) device. A fitted model yields extrapolated ft = 316 GHz current gain cutoff and fmax = 166 GHz maximum oscillation frequency. This device technology is being developed for millimeter wave circuit implementations, targeting a 94 GHz carrier frequency. The modeled intrinsic Fmin < 1dB minimum noise figure obtained promises performance at the target band, given reduction of gate parasitics. In any wireless system, noise and bandwidth limits the... (More)

The first radio frequency (RF) noise measurements on lateral nanowire metal-oxide-semiconductor field-effect transistors (MOSFETs) and a noise model are presented. We have characterized the RF noise and scattering parameters of an indium gallium arsenide (InGaAs) device. A fitted model yields extrapolated ft = 316 GHz current gain cutoff and fmax = 166 GHz maximum oscillation frequency. This device technology is being developed for millimeter wave circuit implementations, targeting a 94 GHz carrier frequency. The modeled intrinsic Fmin < 1dB minimum noise figure obtained promises performance at the target band, given reduction of gate parasitics. In any wireless system, noise and bandwidth limits the performance. Understanding of RF noise in nanowire MOSFET devices is thereby key for realization of future radar and communications systems.

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type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
in
75th Annual Device Research Conference, DRC 2017
publisher
Institute of Electrical and Electronics Engineers Inc.
conference name
75th Annual Device Research Conference, DRC 2017
external identifiers
  • scopus:85028042508
ISBN
9781509063277
DOI
10.1109/DRC.2017.7999451
language
English
LU publication?
yes
id
8ac874f1-2b78-4134-a85b-ba563323a3af
date added to LUP
2017-09-07 12:17:06
date last changed
2018-01-07 12:18:28
@inproceedings{8ac874f1-2b78-4134-a85b-ba563323a3af,
  abstract     = {<p>The first radio frequency (RF) noise measurements on lateral nanowire metal-oxide-semiconductor field-effect transistors (MOSFETs) and a noise model are presented. We have characterized the RF noise and scattering parameters of an indium gallium arsenide (InGaAs) device. A fitted model yields extrapolated f<sub>t</sub> = 316 GHz current gain cutoff and f<sub>max</sub> = 166 GHz maximum oscillation frequency. This device technology is being developed for millimeter wave circuit implementations, targeting a 94 GHz carrier frequency. The modeled intrinsic F<sub>min</sub> &lt; 1dB minimum noise figure obtained promises performance at the target band, given reduction of gate parasitics. In any wireless system, noise and bandwidth limits the performance. Understanding of RF noise in nanowire MOSFET devices is thereby key for realization of future radar and communications systems.</p>},
  author       = {Ohlsson, Lars and Lindelow, Fredrik and Zota, Cezar B. and Ohlrogge, Matthias and Merkle, Thomas and Wernersson, Lars Erik and Lind, Erik},
  booktitle    = {75th Annual Device Research Conference, DRC 2017},
  isbn         = {9781509063277},
  language     = {eng},
  month        = {08},
  publisher    = {Institute of Electrical and Electronics Engineers Inc.},
  title        = {First InGaAs lateral nanowire MOSFET RF noise measurements and model},
  url          = {http://dx.doi.org/10.1109/DRC.2017.7999451},
  year         = {2017},
}