First InGaAs lateral nanowire MOSFET RF noise measurements and model
(2017) 75th Annual Device Research Conference, DRC 2017- Abstract
The first radio frequency (RF) noise measurements on lateral nanowire metal-oxide-semiconductor field-effect transistors (MOSFETs) and a noise model are presented. We have characterized the RF noise and scattering parameters of an indium gallium arsenide (InGaAs) device. A fitted model yields extrapolated ft = 316 GHz current gain cutoff and fmax = 166 GHz maximum oscillation frequency. This device technology is being developed for millimeter wave circuit implementations, targeting a 94 GHz carrier frequency. The modeled intrinsic Fmin < 1dB minimum noise figure obtained promises performance at the target band, given reduction of gate parasitics. In any wireless system, noise and bandwidth limits the... (More)
The first radio frequency (RF) noise measurements on lateral nanowire metal-oxide-semiconductor field-effect transistors (MOSFETs) and a noise model are presented. We have characterized the RF noise and scattering parameters of an indium gallium arsenide (InGaAs) device. A fitted model yields extrapolated ft = 316 GHz current gain cutoff and fmax = 166 GHz maximum oscillation frequency. This device technology is being developed for millimeter wave circuit implementations, targeting a 94 GHz carrier frequency. The modeled intrinsic Fmin < 1dB minimum noise figure obtained promises performance at the target band, given reduction of gate parasitics. In any wireless system, noise and bandwidth limits the performance. Understanding of RF noise in nanowire MOSFET devices is thereby key for realization of future radar and communications systems.
(Less)
- author
- Ohlsson, Lars LU ; Lindelow, Fredrik LU ; Zota, Cezar B. LU ; Ohlrogge, Matthias ; Merkle, Thomas ; Wernersson, Lars Erik LU and Lind, Erik LU
- organization
- publishing date
- 2017-08-01
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- host publication
- 75th Annual Device Research Conference, DRC 2017
- article number
- 7999451
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- 75th Annual Device Research Conference, DRC 2017
- conference location
- South Bend, United States
- conference dates
- 2017-06-25 - 2017-06-28
- external identifiers
-
- scopus:85028042508
- ISBN
- 9781509063277
- DOI
- 10.1109/DRC.2017.7999451
- language
- English
- LU publication?
- yes
- id
- 8ac874f1-2b78-4134-a85b-ba563323a3af
- date added to LUP
- 2017-09-07 12:17:06
- date last changed
- 2024-05-12 20:47:38
@inproceedings{8ac874f1-2b78-4134-a85b-ba563323a3af, abstract = {{<p>The first radio frequency (RF) noise measurements on lateral nanowire metal-oxide-semiconductor field-effect transistors (MOSFETs) and a noise model are presented. We have characterized the RF noise and scattering parameters of an indium gallium arsenide (InGaAs) device. A fitted model yields extrapolated f<sub>t</sub> = 316 GHz current gain cutoff and f<sub>max</sub> = 166 GHz maximum oscillation frequency. This device technology is being developed for millimeter wave circuit implementations, targeting a 94 GHz carrier frequency. The modeled intrinsic F<sub>min</sub> < 1dB minimum noise figure obtained promises performance at the target band, given reduction of gate parasitics. In any wireless system, noise and bandwidth limits the performance. Understanding of RF noise in nanowire MOSFET devices is thereby key for realization of future radar and communications systems.</p>}}, author = {{Ohlsson, Lars and Lindelow, Fredrik and Zota, Cezar B. and Ohlrogge, Matthias and Merkle, Thomas and Wernersson, Lars Erik and Lind, Erik}}, booktitle = {{75th Annual Device Research Conference, DRC 2017}}, isbn = {{9781509063277}}, language = {{eng}}, month = {{08}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, title = {{First InGaAs lateral nanowire MOSFET RF noise measurements and model}}, url = {{https://lup.lub.lu.se/search/files/66649966/NwMosfetNoise_submitted.pdf}}, doi = {{10.1109/DRC.2017.7999451}}, year = {{2017}}, }