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Record performance for junctionless transistors in InGaAs MOSFETs

Zota, Cezar B. LU ; Borg, Mattias LU orcid ; Wernersson, Lars Erik LU and Lind, Erik LU orcid (2017) 37th Symposium on VLSI Technology, VLSI Technology 2017 p.34-35
Abstract

We demonstrate junctionless tri-gate MOSFETs utilizing a single layer 7 nm thick In0.80Ga0.20As (ND ∼ 1×1019 cm-3) as both channel and contacts. Devices with source and drain metal separation of 32 nm and Lg of 25 nm exhibit SS = 76 mV/dec., both the highest reported gm = 1.6 mS/μα and Ion = 160 μA/μm (VDD = 0.5 V, IOFF = 100 nA/μm) for a junctionless transistor. We also examine the influence of the contact thickness, comparing double-layer junctionless devices with 37 nm thick contacts with single-layer 7 nm contact devices.

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author
; ; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
host publication
2017 Symposium on VLSI Technology, VLSI Technology 2017
article number
7998190
pages
34 - 35
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
conference name
37th Symposium on VLSI Technology, VLSI Technology 2017
conference location
Kyoto, Japan
conference dates
2017-06-05 - 2017-06-08
external identifiers
  • scopus:85028066295
ISBN
9784863486058
DOI
10.23919/VLSIT.2017.7998190
language
English
LU publication?
yes
id
1f7d58f2-73f0-44b2-b7bd-e69991745788
date added to LUP
2017-09-07 13:59:57
date last changed
2024-07-22 03:58:42
@inproceedings{1f7d58f2-73f0-44b2-b7bd-e69991745788,
  abstract     = {{<p>We demonstrate junctionless tri-gate MOSFETs utilizing a single layer 7 nm thick In<sub>0.80</sub>Ga<sub>0.20</sub>As (N<sub>D</sub> ∼ 1×10<sup>19</sup> cm<sup>-3</sup>) as both channel and contacts. Devices with source and drain metal separation of 32 nm and L<sub>g</sub> of 25 nm exhibit SS = 76 mV/dec., both the highest reported g<sub>m</sub> = 1.6 mS/μα and I<sub>on</sub> = 160 μA/μm (V<sub>DD</sub> = 0.5 V, I<sub>OFF</sub> = 100 nA/μm) for a junctionless transistor. We also examine the influence of the contact thickness, comparing double-layer junctionless devices with 37 nm thick contacts with single-layer 7 nm contact devices.</p>}},
  author       = {{Zota, Cezar B. and Borg, Mattias and Wernersson, Lars Erik and Lind, Erik}},
  booktitle    = {{2017 Symposium on VLSI Technology, VLSI Technology 2017}},
  isbn         = {{9784863486058}},
  language     = {{eng}},
  month        = {{07}},
  pages        = {{34--35}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  title        = {{Record performance for junctionless transistors in InGaAs MOSFETs}},
  url          = {{http://dx.doi.org/10.23919/VLSIT.2017.7998190}},
  doi          = {{10.23919/VLSIT.2017.7998190}},
  year         = {{2017}},
}