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InGaAs tri-gate MOSFETs with record on-current

Zota, Cezar B. LU ; Lindelow, Fredrik LU ; Wernersson, Lars Erik LU and Lind, Erik LU orcid (2017) 62nd IEEE International Electron Devices Meeting, IEDM 2016 p.1-4
Abstract

We demonstrate InGaAs tri-gate MOSFETs with an on-current of ION = 650 μA/μm at VDD = 0.5 V and IOFF = 100 nA/μm, enabled by an inverse subthreshold slope of SS = 66 mV/decade and transconductance of gm = 3 mS/μm, a Q-factor of 45. This is the highest reported Ion for both Si-based and III-V MOSFETs. These results continue to push III-V MOSFET experimental performance towards its theoretical limit. We find an improvement in SS from 81 to 75 mV/dec. as the effective oxide thickness (EOT) is scaled down from 1.4 to 1 nm, as well as improvements in SS, gd and DIBL from reducing the nanowire width. We also find that electron mobility remains constant as the width is scaled to 18 nm.

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author
; ; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
host publication
2016 IEEE International Electron Devices Meeting, IEDM 2016
article number
7838336
pages
1 - 4
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
conference name
62nd IEEE International Electron Devices Meeting, IEDM 2016
conference location
San Francisco, United States
conference dates
2016-12-03 - 2016-12-07
external identifiers
  • scopus:85014445221
ISBN
9781509039012
DOI
10.1109/IEDM.2016.7838336
language
English
LU publication?
yes
id
5ead8e7d-e699-42ac-827d-63bd16aa9c99
date added to LUP
2017-03-15 10:01:27
date last changed
2024-07-07 14:22:38
@inproceedings{5ead8e7d-e699-42ac-827d-63bd16aa9c99,
  abstract     = {{<p>We demonstrate InGaAs tri-gate MOSFETs with an on-current of I<sub>ON</sub> = 650 μA/μm at V<sub>DD</sub> = 0.5 V and I<sub>OFF</sub> = 100 nA/μm, enabled by an inverse subthreshold slope of SS = 66 mV/decade and transconductance of gm = 3 mS/μm, a Q-factor of 45. This is the highest reported Ion for both Si-based and III-V MOSFETs. These results continue to push III-V MOSFET experimental performance towards its theoretical limit. We find an improvement in SS from 81 to 75 mV/dec. as the effective oxide thickness (EOT) is scaled down from 1.4 to 1 nm, as well as improvements in SS, gd and DIBL from reducing the nanowire width. We also find that electron mobility remains constant as the width is scaled to 18 nm.</p>}},
  author       = {{Zota, Cezar B. and Lindelow, Fredrik and Wernersson, Lars Erik and Lind, Erik}},
  booktitle    = {{2016 IEEE International Electron Devices Meeting, IEDM 2016}},
  isbn         = {{9781509039012}},
  language     = {{eng}},
  month        = {{01}},
  pages        = {{1--4}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  title        = {{InGaAs tri-gate MOSFETs with record on-current}},
  url          = {{https://lup.lub.lu.se/search/files/25557556/IEDM_CBZ_2016_Final.pdf}},
  doi          = {{10.1109/IEDM.2016.7838336}},
  year         = {{2017}},
}