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InGaAs tri-gate MOSFETs with record on-current

Zota, Cezar B. LU ; Lindelow, Fredrik LU ; Wernersson, Lars Erik LU and Lind, Erik LU (2017) 62nd IEEE International Electron Devices Meeting, IEDM 2016 In 2016 IEEE International Electron Devices Meeting, IEDM 2016 p.1-4
Abstract

We demonstrate InGaAs tri-gate MOSFETs with an on-current of ION = 650 μA/μm at VDD = 0.5 V and IOFF = 100 nA/μm, enabled by an inverse subthreshold slope of SS = 66 mV/decade and transconductance of gm = 3 mS/μm, a Q-factor of 45. This is the highest reported Ion for both Si-based and III-V MOSFETs. These results continue to push III-V MOSFET experimental performance towards its theoretical limit. We find an improvement in SS from 81 to 75 mV/dec. as the effective oxide thickness (EOT) is scaled down from 1.4 to 1 nm, as well as improvements in SS, gd and DIBL from reducing the nanowire width. We also find that electron mobility remains constant as the width is scaled to 18 nm.

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author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
in
2016 IEEE International Electron Devices Meeting, IEDM 2016
pages
1 - 4
publisher
Institute of Electrical and Electronics Engineers Inc.
conference name
62nd IEEE International Electron Devices Meeting, IEDM 2016
external identifiers
  • scopus:85014445221
DOI
10.1109/IEDM.2016.7838336
language
English
LU publication?
yes
id
5ead8e7d-e699-42ac-827d-63bd16aa9c99
date added to LUP
2017-03-15 10:01:27
date last changed
2017-05-17 10:40:12
@inproceedings{5ead8e7d-e699-42ac-827d-63bd16aa9c99,
  abstract     = {<p>We demonstrate InGaAs tri-gate MOSFETs with an on-current of I<sub>ON</sub> = 650 μA/μm at V<sub>DD</sub> = 0.5 V and I<sub>OFF</sub> = 100 nA/μm, enabled by an inverse subthreshold slope of SS = 66 mV/decade and transconductance of gm = 3 mS/μm, a Q-factor of 45. This is the highest reported Ion for both Si-based and III-V MOSFETs. These results continue to push III-V MOSFET experimental performance towards its theoretical limit. We find an improvement in SS from 81 to 75 mV/dec. as the effective oxide thickness (EOT) is scaled down from 1.4 to 1 nm, as well as improvements in SS, gd and DIBL from reducing the nanowire width. We also find that electron mobility remains constant as the width is scaled to 18 nm.</p>},
  author       = {Zota, Cezar B. and Lindelow, Fredrik and Wernersson, Lars Erik and Lind, Erik},
  booktitle    = {2016 IEEE International Electron Devices Meeting, IEDM 2016},
  language     = {eng},
  month        = {01},
  pages        = {1--4},
  publisher    = {Institute of Electrical and Electronics Engineers Inc.},
  title        = {InGaAs tri-gate MOSFETs with record on-current},
  url          = {http://dx.doi.org/10.1109/IEDM.2016.7838336},
  year         = {2017},
}