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Gated Hall effect measurements on selectively grown InGaAs nanowires

Lindelöw, F. LU ; Zota, C. B. LU and Lind, E. LU (2017) In Nanotechnology 28(20).
Abstract

InGaAs nanowires is one of the promising material systems of replacing silicon in future CMOS transistors, due to its high electron mobility in combination with the excellent electrostatic control from the tri-gate geometry. In this article, we report on gated Hall measurements on single and multiple In0.85Ga0.15As nanowires, selectively grown in a Hall bridge geometry with nanowire widths down to 50 nm and thicknesses of 10 nm. The gated nanowires can be used as junctionless transistors, which allows for a simplified device processing as no regrowth of contact layer or ion implantation is needed, which is particularly beneficial as transistor dimensions are scaled down. The analysis shows that the InGaAs layer has... (More)

InGaAs nanowires is one of the promising material systems of replacing silicon in future CMOS transistors, due to its high electron mobility in combination with the excellent electrostatic control from the tri-gate geometry. In this article, we report on gated Hall measurements on single and multiple In0.85Ga0.15As nanowires, selectively grown in a Hall bridge geometry with nanowire widths down to 50 nm and thicknesses of 10 nm. The gated nanowires can be used as junctionless transistors, which allows for a simplified device processing as no regrowth of contact layer or ion implantation is needed, which is particularly beneficial as transistor dimensions are scaled down. The analysis shows that the InGaAs layer has a carrier concentration of above 1019 cm-3, with a Hall carrier mobility of around 1000 cm2 V-1 s-1. The gated Hall measurements reveal an increased carrier concentration as a function of applied gate voltage, with an increasing mobility for narrow nanowires but no significant effect on larger nanowires.

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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
carrier concentration, Hall bridge, Hall effect, InGaAs, junctionless, MOSFET, nanowire
in
Nanotechnology
volume
28
issue
20
publisher
IOP Publishing
external identifiers
  • scopus:85018947807
  • wos:000406029600001
ISSN
0957-4484
DOI
10.1088/1361-6528/aa6287
language
English
LU publication?
yes
id
1858cb59-271d-4c08-9de7-78277c2f51e2
date added to LUP
2017-06-01 09:04:15
date last changed
2018-01-07 12:05:53
@article{1858cb59-271d-4c08-9de7-78277c2f51e2,
  abstract     = {<p>InGaAs nanowires is one of the promising material systems of replacing silicon in future CMOS transistors, due to its high electron mobility in combination with the excellent electrostatic control from the tri-gate geometry. In this article, we report on gated Hall measurements on single and multiple In<sub>0.85</sub>Ga<sub>0.15</sub>As nanowires, selectively grown in a Hall bridge geometry with nanowire widths down to 50 nm and thicknesses of 10 nm. The gated nanowires can be used as junctionless transistors, which allows for a simplified device processing as no regrowth of contact layer or ion implantation is needed, which is particularly beneficial as transistor dimensions are scaled down. The analysis shows that the InGaAs layer has a carrier concentration of above 10<sup>19</sup> cm<sup>-3</sup>, with a Hall carrier mobility of around 1000 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup>. The gated Hall measurements reveal an increased carrier concentration as a function of applied gate voltage, with an increasing mobility for narrow nanowires but no significant effect on larger nanowires.</p>},
  articleno    = {205204},
  author       = {Lindelöw, F. and Zota, C. B. and Lind, E.},
  issn         = {0957-4484},
  keyword      = {carrier concentration,Hall bridge,Hall effect,InGaAs,junctionless,MOSFET,nanowire},
  language     = {eng},
  month        = {04},
  number       = {20},
  publisher    = {IOP Publishing},
  series       = {Nanotechnology},
  title        = {Gated Hall effect measurements on selectively grown InGaAs nanowires},
  url          = {http://dx.doi.org/10.1088/1361-6528/aa6287},
  volume       = {28},
  year         = {2017},
}