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- 2023
-
Mark
Geometrical Magnetoresistance as a Tool for Carrier Mobility Extraction in InGaAs MOSFETs
Olausson, Patrik LU and Lind, Erik LU
(2023)
In IEEE Transactions on Electron Devices
70(11).
p.5614-5618
- Contribution to journal › Article
- 2017
-
Mark
Simplifying Nanowire Hall Effect Characterization by Using a Three-Probe Device Design
- Contribution to journal › Article
-
Mark
Gated Hall effect measurements on selectively grown InGaAs nanowires
- Contribution to journal › Article
- 2016
-
Mark
Comparing Hall Effect and Field Effect Measurements on the Same Single Nanowire
Hultin, Olof LU ; Otnes, Gaute LU ; Borgström, Magnus LU
; Bjork, Mikael
; Samuelson, Lars
LU
and Storm, Kristian
LU
(2016)
In Nano Letters
16(1).
p.205-211
- Contribution to journal › Article
-
Mark
Doping evaluation of InP nanowires for tandem junction solar cells
Lindelöw, Fredrik LU ; Heurlin, Magnus LU ; Otnes, Gaute LU ; Dagyte, Vilgaile LU ; Lindgren, David LU ; Hultin, Olof LU ; Storm, Kristian LU ; Samuelson, Lars LU and Borgström, Magnus LU
(2016)
In Nanotechnology
27(6).
- Contribution to journal › Article
- 2013
-
Mark
Novel Processing and Electrical Characterization of Nanowires
(2013)
- Thesis › Doctoral thesis (compilation)
- 2012
-
Mark
Thin InAs membranes and GaSb buffer layers on GaAs(001) substrates
Astromskas, Gvidas LU ; Borg, Mattias LU
and Wernersson, Lars-Erik
LU
(2012)
In Journal of Vacuum Science and Technology B
30(5).
- Contribution to journal › Article