1/f and RTS Noise in InGaAs Nanowire MOSFETs
(2017) Conference on Insulating Films on Semiconductors (INFOS)- Abstract
- Low-frequency noise measurements were performed on high-performance InGaAs nanowire MOSFETs. 1/f noise measurements show number fluctuations, rather than mobility fluctuations, as the dominant noise source. The minimum equivalent input gate voltage noise reported here is 80 μm2μV2/Hz, among the lowest values for III-V FETs, and showing the feasibility of a high-quality, low trap density, high-k gate oxide on InGaAs.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/f053a160-ffbe-4143-bd3d-6f3bf579aad1
- author
- Möhle, Christian ; Zota, Cezar LU ; Hellenbrand, Markus LU and Lind, Erik LU
- organization
- publishing date
- 2017-06-28
- type
- Contribution to conference
- publication status
- published
- subject
- keywords
- InGaAs, MOSFETs, Nanowires, 1/f noise, RTS noise, Elastic tunnelling
- conference name
- Conference on Insulating Films on Semiconductors (INFOS)
- conference location
- Potsdam, Germany
- conference dates
- 2017-06-27 - 2017-06-30
- language
- English
- LU publication?
- yes
- id
- f053a160-ffbe-4143-bd3d-6f3bf579aad1
- date added to LUP
- 2019-07-22 10:26:41
- date last changed
- 2021-07-24 04:36:39
@misc{f053a160-ffbe-4143-bd3d-6f3bf579aad1, abstract = {{Low-frequency noise measurements were performed on high-performance InGaAs nanowire MOSFETs. 1/f noise measurements show number fluctuations, rather than mobility fluctuations, as the dominant noise source. The minimum equivalent input gate voltage noise reported here is 80 μm2μV2/Hz, among the lowest values for III-V FETs, and showing the feasibility of a high-quality, low trap density, high-k gate oxide on InGaAs.}}, author = {{Möhle, Christian and Zota, Cezar and Hellenbrand, Markus and Lind, Erik}}, keywords = {{InGaAs; MOSFETs; Nanowires; 1/f noise; RTS noise; Elastic tunnelling}}, language = {{eng}}, month = {{06}}, title = {{1/f and RTS Noise in InGaAs Nanowire MOSFETs}}, year = {{2017}}, }