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1/f and RTS Noise in InGaAs Nanowire MOSFETs

Möhle, Christian ; Zota, Cezar LU ; Hellenbrand, Markus LU and Lind, Erik LU (2017) Conference on Insulating Films on Semiconductors (INFOS)
Abstract
Low-frequency noise measurements were performed on high-performance InGaAs nanowire MOSFETs. 1/f noise measurements show number fluctuations, rather than mobility fluctuations, as the dominant noise source. The minimum equivalent input gate voltage noise reported here is 80 μm2μV2/Hz, among the lowest values for III-V FETs, and showing the feasibility of a high-quality, low trap density, high-k gate oxide on InGaAs.
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author
; ; and
organization
publishing date
type
Contribution to conference
publication status
published
subject
keywords
InGaAs, MOSFETs, Nanowires, 1/f noise, RTS noise, Elastic tunnelling
conference name
Conference on Insulating Films on Semiconductors (INFOS)
conference location
Potsdam, Germany
conference dates
2017-06-27 - 2017-06-30
language
English
LU publication?
yes
id
f053a160-ffbe-4143-bd3d-6f3bf579aad1
date added to LUP
2019-07-22 10:26:41
date last changed
2021-07-24 04:36:39
@misc{f053a160-ffbe-4143-bd3d-6f3bf579aad1,
  abstract     = {{Low-frequency noise measurements were performed on high-performance InGaAs nanowire MOSFETs. 1/f noise measurements show number fluctuations, rather than mobility fluctuations, as the dominant noise source. The minimum equivalent input gate voltage noise reported here is 80 μm2μV2/Hz, among the lowest values for III-V FETs, and showing the feasibility of a high-quality, low trap density, high-k gate oxide on InGaAs.}},
  author       = {{Möhle, Christian and Zota, Cezar and Hellenbrand, Markus and Lind, Erik}},
  keywords     = {{InGaAs; MOSFETs; Nanowires; 1/f noise; RTS noise; Elastic tunnelling}},
  language     = {{eng}},
  month        = {{06}},
  title        = {{1/f and RTS Noise in InGaAs Nanowire MOSFETs}},
  year         = {{2017}},
}