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- 2017
-
Mark
1/f and RTS noise in InGaAs nanowire MOSFETs
(2017) Conference on Insulating Films on Semiconductors (INFOS) In Microelectronic Engineering 178. p.52-55
- Contribution to journal › Article
-
Mark
1/f and RTS Noise in InGaAs Nanowire MOSFETs
(2017) Conference on Insulating Films on Semiconductors (INFOS)
- Contribution to conference › Paper, not in proceeding
