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Self-Heating in Gate-All-Around Vertical III-V InAs/InGaAs MOSFETs

Rangasamy, Gautham LU ; Ram, Mamidala Saketh LU orcid ; Fhager, Lars Ohlsson LU orcid and Wernersson, Lars Erik LU (2023) In IEEE Electron Device Letters 44(7). p.1212-1215
Abstract

We investigate self-heating in vertical, gate-all-around III-V InAs/InGaAs nanowire MOSFETs using pulsed IV measurements at various temperatures. Low temperature measurements reveal a negative output conductance indicating self-heating in the transistor. Under pulsed measurements, an increase in drain current (15%) and transconductance (30%) are observed at room temperature, with values influenced by the pulse width. This effect on performance is quantified with determination of the thermal resistance and capacitance. Furthermore, a first order thermal circuit is modelled based on the thermal impedances. The results indicate that the intrinsic temperature rises to 385 K when the device is operated in DC at room temperature (300 K) with... (More)

We investigate self-heating in vertical, gate-all-around III-V InAs/InGaAs nanowire MOSFETs using pulsed IV measurements at various temperatures. Low temperature measurements reveal a negative output conductance indicating self-heating in the transistor. Under pulsed measurements, an increase in drain current (15%) and transconductance (30%) are observed at room temperature, with values influenced by the pulse width. This effect on performance is quantified with determination of the thermal resistance and capacitance. Furthermore, a first order thermal circuit is modelled based on the thermal impedances. The results indicate that the intrinsic temperature rises to 385 K when the device is operated in DC at room temperature (300 K) with a thermal time constant of 1~μ s. We find that self-heating is a limiting factor for device performance.

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author
; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
III-V, MOSFETs, self-heating, vertical nanowires
in
IEEE Electron Device Letters
volume
44
issue
7
pages
4 pages
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • scopus:85159845126
ISSN
0741-3106
DOI
10.1109/LED.2023.3273785
language
English
LU publication?
yes
id
fb0fc080-578d-4925-a145-439c7e8014dc
date added to LUP
2023-09-25 13:52:28
date last changed
2025-10-14 10:00:31
@article{fb0fc080-578d-4925-a145-439c7e8014dc,
  abstract     = {{<p>We investigate self-heating in vertical, gate-all-around III-V InAs/InGaAs nanowire MOSFETs using pulsed IV measurements at various temperatures. Low temperature measurements reveal a negative output conductance indicating self-heating in the transistor. Under pulsed measurements, an increase in drain current (15%) and transconductance (30%) are observed at room temperature, with values influenced by the pulse width. This effect on performance is quantified with determination of the thermal resistance and capacitance. Furthermore, a first order thermal circuit is modelled based on the thermal impedances. The results indicate that the intrinsic temperature rises to 385 K when the device is operated in DC at room temperature (300 K) with a thermal time constant of 1~μ s. We find that self-heating is a limiting factor for device performance.</p>}},
  author       = {{Rangasamy, Gautham and Ram, Mamidala Saketh and Fhager, Lars Ohlsson and Wernersson, Lars Erik}},
  issn         = {{0741-3106}},
  keywords     = {{III-V; MOSFETs; self-heating; vertical nanowires}},
  language     = {{eng}},
  month        = {{07}},
  number       = {{7}},
  pages        = {{1212--1215}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  series       = {{IEEE Electron Device Letters}},
  title        = {{Self-Heating in Gate-All-Around Vertical III-V InAs/InGaAs MOSFETs}},
  url          = {{http://dx.doi.org/10.1109/LED.2023.3273785}},
  doi          = {{10.1109/LED.2023.3273785}},
  volume       = {{44}},
  year         = {{2023}},
}