Publications | Lund University Publications

1 – 10 of 38

show: 10
|
sort: year (new to old)

News feed Embed this list Save this search Mark all Export

Cancel

Embed this list

copy and paste the html snippet below into your own page:

<iframe src="https://lup.lub.lu.se/search/publication?embed=1&q=issn+exact+%220741-3106%22&amp;hide_pagination=1&amp;hide_info=1&amp;hide_options=1"
  width="100%"
  height="400"
  allowtransparency="true"
  frameborder="0">
</iframe>

« previous
1
2
3
4
next »

2025
Mark Scalable Vertical In-Ga-As Nanowire MOSFET With 67 mV/dec at 126μm Gate Width
Lofstrand, Anette ^LU ; Sandberg, Marcus E. ^LU ; Svensson, Johannes ^LU and Fhager, Lars ^LU (2025) In IEEE Electron Device Letters 46(4). p.560-563
- Contribution to journal › Article
Mark Low-frequency noise in ferroelectric III-V vertical gate-all-around FETs
Zhu, Zhongyunshen ^LU ; Mamidala, Karthik Ram ^LU ; Persson, Anton E. O. ^LU and Wernersson, Lars-Erik ^LU (2025) In IEEE Electron Device Letters
- Contribution to journal › Article
2024
Mark RF Characterization of Ferroelectric MOS Capacitors
Persson, Anton E.O. ^LU ; Andric, Stefan ^LU ; Fhager, Lars ^LU and Wernersson, Lars Erik ^LU (2024) In IEEE Electron Device Letters 45(9). p.1653-1656
- Contribution to journal › Article
Mark Cryogenic Ferroelectricity of HZO Capacitors on a III-V Semiconductor
Ram, Mamidala Karthik ^LU ; Dahlberg, Hannes ^LU and Wernersson, Lars Erik ^LU (2024) In IEEE Electron Device Letters 45(10). p.1827-1830
- Contribution to journal › Article
2023
Mark Self-Heating in Gate-All-Around Vertical III-V InAs/InGaAs MOSFETs
Rangasamy, Gautham ^LU ; Ram, Mamidala Saketh ^LU ; Fhager, Lars Ohlsson ^LU and Wernersson, Lars Erik ^LU (2023) In IEEE Electron Device Letters 44(7). p.1212-1215
- Contribution to journal › Article
Mark Low-Power, Self-Aligned Vertical InGaAsSb NW PMOS With S < 100 mV/dec
Krishnaraja, Abinaya ^LU ; Zhu, Zhongyunshen ^LU ; Svensson, Johannes ^LU and Wernersson, Lars Erik ^LU (2023) In IEEE Electron Device Letters 44(7). p.1064-1067
- Contribution to journal › Article
2022
Mark Integration of Ferroelectric HfxZr1-xO2 on Vertical III-V Nanowire Gate-All-Around FETs on Silicon
Persson, Anton E. O. ^LU ; Zhu, Zhongyunshen ^LU ; Athle, Robin ^LU and Wernersson, Lars-Erik ^LU (2022) In IEEE Electron Device Letters 43(6). p.854-857
- Contribution to journal › Article
Mark Low-Frequency Noise in Vertical InAs/InGaAs Gate-All-Around MOSFETs at 15 K for Cryogenic Applications
Mamidala, Saketh, Ram ^LU ; Svensson, Johannes ^LU ; Skog, Sebastian ; Johannesson, Sofie and Wernersson, Lars-Erik ^LU (2022) In IEEE Electron Device Letters 43(12). p.2033-2033
- Contribution to journal › Article
2021
Mark Increased Breakdown Voltage in Vertical Heterostructure III-V Nanowire MOSFETs with a Field Plate
Kilpi, Olli Pekka ^LU ; Andric, Stefan ^LU ; Svensson, Johannes ^LU ; Ram, Mamidala Saketh ^LU ; Lind, Erik ^LU and Wernersson, Lars Erik ^LU (2021) In IEEE Electron Device Letters 42(11). p.1596-1598
- Contribution to journal › Article
2020
Mark Low-Power Resistive Memory Integrated on III-V Vertical Nanowire MOSFETs on Silicon
Mamidala, Saketh, Ram ^LU ; Persson, Karl-Magnus ^LU ; Borg, Mattias ^LU and Wernersson, Lars-Erik ^LU (2020) In IEEE Electron Device Letters 41(9). p.1432-1435
- Contribution to journal › Article

« previous
1
2
3
4
next »

your query:: Remove issn: 0741-3106