Skip to main content

Lund University Publications

LUND UNIVERSITY LIBRARIES

Cryogenic Ferroelectricity of HZO Capacitors on a III-V Semiconductor

Ram, Mamidala Karthik LU ; Dahlberg, Hannes LU and Wernersson, Lars Erik LU (2024) In IEEE Electron Device Letters p.1-1
Abstract

Non-volatile cryogenic memories are crucial for realizing energy-efficient and scaled quantum computing systems. In this letter, we evaluate the cryogenic performance of an HZO-based ferroelectric capacitor (FeCAP) with a compound semiconductor (InAs) as the bottom electrode. We demonstrate that near identical remnant polarization can be obtained at 14 K compared to room temperature by increasing the voltage during the wake-up process. The switching dynamics of the FeCAP are studied at temperatures as low as 50 K with measured data analyzed by the nucleation-limited switching model. These results together with the increased endurance at cryogenic temperatures present promising opportunities for cryogenic ferroelectrics.

Please use this url to cite or link to this publication:
author
; and
organization
publishing date
type
Contribution to journal
publication status
epub
subject
keywords
Capacitors, Cryogenic, Cryogenics, FeRAM, Ferroelectric, Non-volatile, Nucleation Limited Switching, Performance evaluation, Random access memory, Semiconductor device measurement, Switches, Switching Dynamics, Voltage measurement
in
IEEE Electron Device Letters
pages
1 pages
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • scopus:85201784247
ISSN
0741-3106
DOI
10.1109/LED.2024.3448378
language
English
LU publication?
yes
additional info
Publisher Copyright: IEEE
id
787a150e-e58d-41a3-aee2-90731adf6187
date added to LUP
2024-09-04 17:25:03
date last changed
2024-09-05 09:17:24
@article{787a150e-e58d-41a3-aee2-90731adf6187,
  abstract     = {{<p>Non-volatile cryogenic memories are crucial for realizing energy-efficient and scaled quantum computing systems. In this letter, we evaluate the cryogenic performance of an HZO-based ferroelectric capacitor (FeCAP) with a compound semiconductor (InAs) as the bottom electrode. We demonstrate that near identical remnant polarization can be obtained at 14 K compared to room temperature by increasing the voltage during the wake-up process. The switching dynamics of the FeCAP are studied at temperatures as low as 50 K with measured data analyzed by the nucleation-limited switching model. These results together with the increased endurance at cryogenic temperatures present promising opportunities for cryogenic ferroelectrics.</p>}},
  author       = {{Ram, Mamidala Karthik and Dahlberg, Hannes and Wernersson, Lars Erik}},
  issn         = {{0741-3106}},
  keywords     = {{Capacitors; Cryogenic; Cryogenics; FeRAM; Ferroelectric; Non-volatile; Nucleation Limited Switching; Performance evaluation; Random access memory; Semiconductor device measurement; Switches; Switching Dynamics; Voltage measurement}},
  language     = {{eng}},
  pages        = {{1--1}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  series       = {{IEEE Electron Device Letters}},
  title        = {{Cryogenic Ferroelectricity of HZO Capacitors on a III-V Semiconductor}},
  url          = {{http://dx.doi.org/10.1109/LED.2024.3448378}},
  doi          = {{10.1109/LED.2024.3448378}},
  year         = {{2024}},
}