ACT: Advanced Chip Technology
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- 2025
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Mark
Cryogenic ferroelectricity of HZO with an aluminum oxide interlayer
(2025) In IEEE Transactions on Electron Devices
- Contribution to journal › Article
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Mark
Low-frequency noise in ferroelectric III-V vertical gate-all-around FETs
(2025) In IEEE Electron Device Letters
- Contribution to journal › Article
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Mark
Interface Characterization of Plasma-Treated InAs Electrodes for Resistive Random-Access Memories Using Capacitance–Voltage Methods
(2025) In Physica Status Solidi (A) Applications and Materials Science
- Contribution to journal › Article
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Mark
Multi-level vertical III-V nanowire gate-all-around ferroelectric FETs for in-memory computing
(2025)
- Contribution to conference › Abstract
