Zhongyunshen Zhu (Former)
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- 2025
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Mark
Multi-level vertical III-V nanowire gate-all-rround ferroelectric FETs for in-memory computing
(2025)
- Contribution to conference › Abstract
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Mark
Low-frequency noise in ferroelectric III-V vertical gate-all-around FETs
(2025) In IEEE Electron Device Letters
- Contribution to journal › Article
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Mark
A Reconfigurable Ferroelectric Transistor as An Ultra-Scaled Cell for Low-Power In-Memory Data Processing
- Contribution to journal › Article
- 2024
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Mark
III-V heterostructure tunnel field-effect transistor operation at different temperature regimes
- Contribution to journal › Article
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Mark
Multifunctional Reconfigurable Operations in an Ultra-Scaled Ferroelectric Negative Transconductance Transistor
- Contribution to journal › Article
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Mark
TFET Circuit Configurations Operating below 60 mV/dec
- Contribution to journal › Article
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Mark
Source Design of Vertical III-V Nanowire Tunnel Field-Effect Transistors
- Contribution to journal › Article
- 2023
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Mark
Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor
- Contribution to journal › Article
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Mark
Low-Power, Self-Aligned Vertical InGaAsSb NW PMOS With S < 100 mV/dec
- Contribution to journal › Article
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Mark
Sensing single domains and individual defects in scaled ferroelectrics
- Contribution to journal › Article
