Anton Persson (Former)
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- 2025
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Mark
A Reconfigurable Ferroelectric Transistor as An Ultra-Scaled Cell for Low-Power In-Memory Data Processing
(
- Contribution to journal › Article
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Mark
Low-frequency noise in ferroelectric III-V vertical gate-all-around FETs
2025) In IEEE Electron Device Letters(
- Contribution to journal › Article
- 2024
-
Mark
RF Characterization of Ferroelectric MOS Capacitors
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- Contribution to journal › Article
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Mark
Multifunctional Reconfigurable Operations in an Ultra-Scaled Ferroelectric Negative Transconductance Transistor
(
- Contribution to journal › Article
- 2023
-
Mark
Sensing single domains and individual defects in scaled ferroelectrics
(
- Contribution to journal › Article
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Mark
Integration of Ferroelectric HfO2 onto a III-V Nanowire Platform
(
- Thesis › Doctoral thesis (compilation)
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Mark
Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor
(
- Contribution to journal › Article
- 2022
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Mark
Improved Endurance of Ferroelectric HfxZr1–xO2 Integrated on InAs Using Millisecond Annealing
(
- Contribution to journal › Article
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Mark
Top Electrode Engineering for Freedom in Design and Implementation of Ferroelectric Tunnel Junctions Based on Hf1- xZrxO2
(
- Contribution to journal › Article
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Mark
Integration of Ferroelectric HfxZr1-xO2 on Vertical III-V Nanowire Gate-All-Around FETs on Silicon
(
- Contribution to journal › Article