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Multifunctional Reconfigurable Operations in an Ultra-Scaled Ferroelectric Negative Transconductance Transistor

Zhu, Zhongyunshen LU orcid ; Persson, Anton E.O. LU orcid and Wernersson, Lars Erik LU (2024) In ACS Nano 18(42). p.28977-28985
Abstract

The integration of functional materials into electronic devices has become a key approach to extending Moore’s law by increasing the functional density of electronic circuits. Here, we present a device technology based on ultrascaled ferroelectric, antiambipolar transistors (ferro-AAT) with robust negative transconductance, enabling a wide range of reconfigurable functionalities with applications in both the digital and analog domains. The device relies on the integration of a hafnia-based ferroelectric gate stack on a vertical nanowire tunnel field-effect transistor. Through intentional gate/source overlap and tunnel-junction engineering, we demonstrate enhanced antiambipolarity with a high negative transconductance that is... (More)

The integration of functional materials into electronic devices has become a key approach to extending Moore’s law by increasing the functional density of electronic circuits. Here, we present a device technology based on ultrascaled ferroelectric, antiambipolar transistors (ferro-AAT) with robust negative transconductance, enabling a wide range of reconfigurable functionalities with applications in both the digital and analog domains. The device relies on the integration of a hafnia-based ferroelectric gate stack on a vertical nanowire tunnel field-effect transistor. Through intentional gate/source overlap and tunnel-junction engineering, we demonstrate enhanced antiambipolarity with a high negative transconductance that is reconfigurable using the nonvolatile remanent polarization of the ferroelectric. Experimental validation highlights the versatility of this ferro-AAT in two implementation scenarios: content addressable memory (CAM) for high-density data search and reconfigurable signal processing in analog circuits. As a single-transistor cell for CAMs, the ferro-AAT shows subpicojoule operation for one search with a compact footprint of ∼0.01 μm2. For single-transistor-based signal modulation, multistate reconfigurations and high power conversion (>95%) are achieved in the ferro-AAT, resulting in a significant reduction in the complexity of analog circuit design. Our results reveal that the distinctive device properties allow ferro-AATs to operate beyond conventional transistors with multiple reconfigurable functionalities, ultrascaled footprint, and low power consumption.

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author
; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
data search, ferroelectric, multifunctional, negative transconductance, reconfigurable, signal processing
in
ACS Nano
volume
18
issue
42
pages
9 pages
publisher
The American Chemical Society (ACS)
external identifiers
  • pmid:39392594
  • scopus:85206539142
ISSN
1936-0851
DOI
10.1021/acsnano.4c09598
language
English
LU publication?
yes
id
fa3b8430-7e4b-4fa4-9644-5638353c0431
date added to LUP
2024-12-04 13:28:21
date last changed
2025-07-31 09:50:50
@article{fa3b8430-7e4b-4fa4-9644-5638353c0431,
  abstract     = {{<p>The integration of functional materials into electronic devices has become a key approach to extending Moore’s law by increasing the functional density of electronic circuits. Here, we present a device technology based on ultrascaled ferroelectric, antiambipolar transistors (ferro-AAT) with robust negative transconductance, enabling a wide range of reconfigurable functionalities with applications in both the digital and analog domains. The device relies on the integration of a hafnia-based ferroelectric gate stack on a vertical nanowire tunnel field-effect transistor. Through intentional gate/source overlap and tunnel-junction engineering, we demonstrate enhanced antiambipolarity with a high negative transconductance that is reconfigurable using the nonvolatile remanent polarization of the ferroelectric. Experimental validation highlights the versatility of this ferro-AAT in two implementation scenarios: content addressable memory (CAM) for high-density data search and reconfigurable signal processing in analog circuits. As a single-transistor cell for CAMs, the ferro-AAT shows subpicojoule operation for one search with a compact footprint of ∼0.01 μm<sup>2</sup>. For single-transistor-based signal modulation, multistate reconfigurations and high power conversion (&gt;95%) are achieved in the ferro-AAT, resulting in a significant reduction in the complexity of analog circuit design. Our results reveal that the distinctive device properties allow ferro-AATs to operate beyond conventional transistors with multiple reconfigurable functionalities, ultrascaled footprint, and low power consumption.</p>}},
  author       = {{Zhu, Zhongyunshen and Persson, Anton E.O. and Wernersson, Lars Erik}},
  issn         = {{1936-0851}},
  keywords     = {{data search; ferroelectric; multifunctional; negative transconductance; reconfigurable; signal processing}},
  language     = {{eng}},
  number       = {{42}},
  pages        = {{28977--28985}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{ACS Nano}},
  title        = {{Multifunctional Reconfigurable Operations in an Ultra-Scaled Ferroelectric Negative Transconductance Transistor}},
  url          = {{http://dx.doi.org/10.1021/acsnano.4c09598}},
  doi          = {{10.1021/acsnano.4c09598}},
  volume       = {{18}},
  year         = {{2024}},
}