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RF Characterization of Ferroelectric MOS Capacitors

Persson, Anton E.O. LU orcid ; Andric, Stefan LU ; Fhager, Lars LU orcid and Wernersson, Lars Erik LU (2024) In IEEE Electron Device Letters 45(9). p.1653-1656
Abstract

The high-frequency capacitive and switching response of ferroelectric Hf0.5Zr0.5O2 (HZO) is investigated on scaled ferroelectric metal-oxide-semiconductor III-V capacitors. Spanning over six orders of magnitude, the measured frequency response allows for accurate modeling of the capacitance-frequency dispersion. The steady-state ferroelectric behavior is retained even in the mm-wave frequency range and provides a 25% capacitive tunability, demonstrating its applicability as a non-volatile reconfigurable varactor. The measured film reconfigurability is in the nanosecond time-regime, mainly limited by the measurement setup.

Please use this url to cite or link to this publication:
author
; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Ferroelectric, HZO, III-V, mm-wave
in
IEEE Electron Device Letters
volume
45
issue
9
pages
4 pages
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • scopus:85198709319
ISSN
0741-3106
DOI
10.1109/LED.2024.3428971
language
English
LU publication?
yes
additional info
Publisher Copyright: © 1980-2012 IEEE.
id
fea50ffa-0d84-41ef-880f-3e1b1a74ef29
date added to LUP
2024-12-04 12:46:23
date last changed
2025-10-14 11:16:54
@article{fea50ffa-0d84-41ef-880f-3e1b1a74ef29,
  abstract     = {{<p>The high-frequency capacitive and switching response of ferroelectric Hf0.5Zr0.5O2 (HZO) is investigated on scaled ferroelectric metal-oxide-semiconductor III-V capacitors. Spanning over six orders of magnitude, the measured frequency response allows for accurate modeling of the capacitance-frequency dispersion. The steady-state ferroelectric behavior is retained even in the mm-wave frequency range and provides a 25% capacitive tunability, demonstrating its applicability as a non-volatile reconfigurable varactor. The measured film reconfigurability is in the nanosecond time-regime, mainly limited by the measurement setup.</p>}},
  author       = {{Persson, Anton E.O. and Andric, Stefan and Fhager, Lars and Wernersson, Lars Erik}},
  issn         = {{0741-3106}},
  keywords     = {{Ferroelectric; HZO; III-V; mm-wave}},
  language     = {{eng}},
  number       = {{9}},
  pages        = {{1653--1656}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  series       = {{IEEE Electron Device Letters}},
  title        = {{RF Characterization of Ferroelectric MOS Capacitors}},
  url          = {{http://dx.doi.org/10.1109/LED.2024.3428971}},
  doi          = {{10.1109/LED.2024.3428971}},
  volume       = {{45}},
  year         = {{2024}},
}