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As-deposited ferroelectric HZO on a III–V semiconductor

Andersen, André LU ; Persson, Anton E. O. LU orcid and Wernersson, Lars-erik LU (2022) In Applied Physics Letters 121(1). p.012901-012901
Abstract
By electrical characterization of thin films deposited by atomic layer deposition, HfxZr1−xO2 (HZO) is shown to be ferroelectric as-deposited, i.e., without any annealing step, using a thermal budget of 300 °C. By fabricating laminated HZO films rather than the traditional solid-solution HZO, a remanent polarization of Pr = 11 μC/cm2 and endurance exceeding 106 are obtained. Films grown on thermally reactive InAs semiconductor substrates showed capacitance–voltage modulation and hysteresis, which varied depending on interfacial oxide construction. Additionally, a trade-off between higher polarization and lower gate leakage was found when comparing different laminate... (More)
By electrical characterization of thin films deposited by atomic layer deposition, HfxZr1−xO2 (HZO) is shown to be ferroelectric as-deposited, i.e., without any annealing step, using a thermal budget of 300 °C. By fabricating laminated HZO films rather than the traditional solid-solution HZO, a remanent polarization of Pr = 11 μC/cm2 and endurance exceeding 106 are obtained. Films grown on thermally reactive InAs semiconductor substrates showed capacitance–voltage modulation and hysteresis, which varied depending on interfacial oxide construction. Additionally, a trade-off between higher polarization and lower gate leakage was found when comparing different laminate structures and deposition temperatures. Scaling the thickness of the laminated oxides revealed that films remain ferroelectric at 6.5 nm with an increased breakdown field for thinner devices. (Less)
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author
; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
121
issue
1
pages
012901 - 012901
publisher
American Institute of Physics (AIP)
external identifiers
  • scopus:85133967483
ISSN
0003-6951
DOI
10.1063/5.0097462
language
English
LU publication?
yes
id
d6e4e192-2cc4-4ef6-b6a8-04b70a30b277
date added to LUP
2022-07-07 11:18:58
date last changed
2023-03-15 21:21:53
@article{d6e4e192-2cc4-4ef6-b6a8-04b70a30b277,
  abstract     = {{By electrical characterization of thin films deposited by atomic layer deposition, Hf<sub>x</sub>Zr<sub>1−x</sub>O<sub>2</sub> (HZO) is shown to be ferroelectric as-deposited, i.e., without any annealing step, using a thermal budget of 300 °C. By fabricating laminated HZO films rather than the traditional solid-solution HZO, a remanent polarization of P<sub>r</sub> = 11 μC/cm<sup>2</sup> and endurance exceeding 10<sup>6</sup> are obtained. Films grown on thermally reactive InAs semiconductor substrates showed capacitance–voltage modulation and hysteresis, which varied depending on interfacial oxide construction. Additionally, a trade-off between higher polarization and lower gate leakage was found when comparing different laminate structures and deposition temperatures. Scaling the thickness of the laminated oxides revealed that films remain ferroelectric at 6.5 nm with an increased breakdown field for thinner devices.}},
  author       = {{Andersen, André and Persson, Anton E. O. and Wernersson, Lars-erik}},
  issn         = {{0003-6951}},
  language     = {{eng}},
  month        = {{07}},
  number       = {{1}},
  pages        = {{012901--012901}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Applied Physics Letters}},
  title        = {{As-deposited ferroelectric HZO on a III–V semiconductor}},
  url          = {{https://lup.lub.lu.se/search/files/136625526/accepted_manuscript.pdf}},
  doi          = {{10.1063/5.0097462}},
  volume       = {{121}},
  year         = {{2022}},
}