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Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor

Zhu, Zhongyunshen LU orcid ; Persson, Anton E. O. LU orcid and Wernersson, Lars-Erik LU (2023) In Nature Communications 14.
Abstract
Reconfigurable transistors are an emerging device technology adding new functionalities while lowering the circuit architecture complexity. However, most investigations focus on digital applications. Here, we demonstrate a single vertical nanowire ferroelectric tunnel field-effect transistor (ferro-TFET) that can modulate an input signal with diverse modes including signal transmission, phase shift, frequency doubling, and mixing with significant suppression of undesired harmonics for reconfigurable analogue applications. We realize this by a heterostructure design in which a gate/source overlapped channel enables nearly perfect parabolic transfer characteristics with robust negative transconductance. By using a ferroelectric gate oxide,... (More)
Reconfigurable transistors are an emerging device technology adding new functionalities while lowering the circuit architecture complexity. However, most investigations focus on digital applications. Here, we demonstrate a single vertical nanowire ferroelectric tunnel field-effect transistor (ferro-TFET) that can modulate an input signal with diverse modes including signal transmission, phase shift, frequency doubling, and mixing with significant suppression of undesired harmonics for reconfigurable analogue applications. We realize this by a heterostructure design in which a gate/source overlapped channel enables nearly perfect parabolic transfer characteristics with robust negative transconductance. By using a ferroelectric gate oxide, our ferro-TFET is non-volatilely reconfigurable, enabling various modes of signal modulation. The ferro-TFET shows merits of reconfigurability, reduced footprint, and low supply voltage for signal modulation. This work provides the possibility for monolithic integration of both steep-slope TFETs and reconfigurable ferro-TFETs towards high-density, energy-efficient, and multifunctional digital/analogue hybrid circuits. (Less)
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author
; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nature Communications
volume
14
publisher
Nature Publishing Group
external identifiers
  • pmid:37137907
  • scopus:85157980341
ISSN
2041-1723
DOI
10.1038/s41467-023-38242-w
language
English
LU publication?
yes
id
bbac3b1c-888f-4989-b61f-d8faa227c3a2
date added to LUP
2023-05-16 00:07:26
date last changed
2023-11-22 18:21:16
@article{bbac3b1c-888f-4989-b61f-d8faa227c3a2,
  abstract     = {{Reconfigurable transistors are an emerging device technology adding new functionalities while lowering the circuit architecture complexity. However, most investigations focus on digital applications. Here, we demonstrate a single vertical nanowire ferroelectric tunnel field-effect transistor (ferro-TFET) that can modulate an input signal with diverse modes including signal transmission, phase shift, frequency doubling, and mixing with significant suppression of undesired harmonics for reconfigurable analogue applications. We realize this by a heterostructure design in which a gate/source overlapped channel enables nearly perfect parabolic transfer characteristics with robust negative transconductance. By using a ferroelectric gate oxide, our ferro-TFET is non-volatilely reconfigurable, enabling various modes of signal modulation. The ferro-TFET shows merits of reconfigurability, reduced footprint, and low supply voltage for signal modulation. This work provides the possibility for monolithic integration of both steep-slope TFETs and reconfigurable ferro-TFETs towards high-density, energy-efficient, and multifunctional digital/analogue hybrid circuits.}},
  author       = {{Zhu, Zhongyunshen and Persson, Anton E. O. and Wernersson, Lars-Erik}},
  issn         = {{2041-1723}},
  language     = {{eng}},
  month        = {{05}},
  publisher    = {{Nature Publishing Group}},
  series       = {{Nature Communications}},
  title        = {{Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor}},
  url          = {{http://dx.doi.org/10.1038/s41467-023-38242-w}},
  doi          = {{10.1038/s41467-023-38242-w}},
  volume       = {{14}},
  year         = {{2023}},
}