Sensing single domains and individual defects in scaled ferroelectrics
Zhu, Zhongyunshen LU
; Persson, Anton E O
LU
and Wernersson, Lars-Erik
LU
(2023)
In Science Advances
9(5).
- Abstract
Ultra-scaled ferroelectrics are desirable for high-density nonvolatile memories and neuromorphic computing; however, for advanced applications, single domain dynamics and defect behavior need to be understood at scaled geometries. Here, we demonstrate the integration of a ferroelectric gate stack on a heterostructure tunnel field-effect transistor (TFET) with subthermionic operation. On the basis of the ultrashort effective channel created by the band-to-band tunneling process, the localized potential variations induced by single domains and individual defects are sensed without physical gate-length scaling required for conventional transistors. We electrically measure abrupt threshold voltage shifts and quantify the appearance of new... (More)
Ultra-scaled ferroelectrics are desirable for high-density nonvolatile memories and neuromorphic computing; however, for advanced applications, single domain dynamics and defect behavior need to be understood at scaled geometries. Here, we demonstrate the integration of a ferroelectric gate stack on a heterostructure tunnel field-effect transistor (TFET) with subthermionic operation. On the basis of the ultrashort effective channel created by the band-to-band tunneling process, the localized potential variations induced by single domains and individual defects are sensed without physical gate-length scaling required for conventional transistors. We electrically measure abrupt threshold voltage shifts and quantify the appearance of new individual defects activated by the ferroelectric switching. Our results show that ferroelectric films can be integrated on heterostructure devices and indicate that the intrinsic electrostatic control within ferroelectric TFETs provides the opportunity for ultrasensitive scale-free detection of single domains and defects in ultra-scaled ferroelectrics. Our approach opens a previously unidentified path for investigating the ultimate scaling limits of ferroelectronics.
(Less)
- author
- Zhu, Zhongyunshen
LU
; Persson, Anton E O
LU
and Wernersson, Lars-Erik
LU
- organization
- publishing date
- 2023-02-03
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Science Advances
- volume
- 9
- issue
- 5
- article number
- eade7098
- pages
- 10 pages
- publisher
- American Association for the Advancement of Science (AAAS)
- external identifiers
-
- scopus:85147458096
- pmid:36735784
- ISSN
- 2375-2548
- DOI
- 10.1126/sciadv.ade7098
- language
- English
- LU publication?
- yes
- id
- 25eadfee-0630-4f9d-8f5c-113f6213e06f
- date added to LUP
- 2023-02-10 15:52:42
- date last changed
- 2024-06-27 13:21:17
@article{25eadfee-0630-4f9d-8f5c-113f6213e06f,
abstract = {{<p>Ultra-scaled ferroelectrics are desirable for high-density nonvolatile memories and neuromorphic computing; however, for advanced applications, single domain dynamics and defect behavior need to be understood at scaled geometries. Here, we demonstrate the integration of a ferroelectric gate stack on a heterostructure tunnel field-effect transistor (TFET) with subthermionic operation. On the basis of the ultrashort effective channel created by the band-to-band tunneling process, the localized potential variations induced by single domains and individual defects are sensed without physical gate-length scaling required for conventional transistors. We electrically measure abrupt threshold voltage shifts and quantify the appearance of new individual defects activated by the ferroelectric switching. Our results show that ferroelectric films can be integrated on heterostructure devices and indicate that the intrinsic electrostatic control within ferroelectric TFETs provides the opportunity for ultrasensitive scale-free detection of single domains and defects in ultra-scaled ferroelectrics. Our approach opens a previously unidentified path for investigating the ultimate scaling limits of ferroelectronics.</p>}},
author = {{Zhu, Zhongyunshen and Persson, Anton E O and Wernersson, Lars-Erik}},
issn = {{2375-2548}},
language = {{eng}},
month = {{02}},
number = {{5}},
publisher = {{American Association for the Advancement of Science (AAAS)}},
series = {{Science Advances}},
title = {{Sensing single domains and individual defects in scaled ferroelectrics}},
url = {{http://dx.doi.org/10.1126/sciadv.ade7098}},
doi = {{10.1126/sciadv.ade7098}},
volume = {{9}},
year = {{2023}},
}