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TFET Circuit Configurations Operating below 60 mV/dec

Rangasamy, Gautham LU ; Zhu, Zhongyunshen LU orcid ; Fhager, Lars Ohlsson LU orcid and Wernersson, Lars Erik LU (2024) In IEEE Transactions on Nanotechnology p.1-8
Abstract

Tunnel Field-Effect Transistors (TFETs) offer more energy efficient alternative to CMOS for design of low power circuits. In spite of this potential, circuits based on TFETs have not been experimentally demonstrated so far. In this letter, we explore TFET fabrication and basic functionality of n-TFET based circuits in the following configurations: a current mirror, a diode-connected inverter, and a cascode. Individual TFETs in the circuit operate well below 60 mV/dec operation with minimum achieved subthreshold swing (SS) of 30 mV/dec at drain voltage of 400 mV. To analyse the circuit operation, individual devices are connected via FEOL and are biased at 300 mV supply voltage, with an input frequency of 200 kHz. The measured circuit... (More)

Tunnel Field-Effect Transistors (TFETs) offer more energy efficient alternative to CMOS for design of low power circuits. In spite of this potential, circuits based on TFETs have not been experimentally demonstrated so far. In this letter, we explore TFET fabrication and basic functionality of n-TFET based circuits in the following configurations: a current mirror, a diode-connected inverter, and a cascode. Individual TFETs in the circuit operate well below 60 mV/dec operation with minimum achieved subthreshold swing (SS) of 30 mV/dec at drain voltage of 400 mV. To analyse the circuit operation, individual devices are connected via FEOL and are biased at 300 mV supply voltage, with an input frequency of 200 kHz. The measured circuit configurations demonstrate the expected functionality.

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Please use this url to cite or link to this publication:
author
; ; and
organization
publishing date
type
Contribution to journal
publication status
epub
subject
keywords
Current mirrors, III-V, IoT circuit configuration, Logic gates, low power, MOSFET, Nanowires, Quantum capacitance, sub-threshold analog, TFETs, Transistors, vertical nanowires
in
IEEE Transactions on Nanotechnology
pages
8 pages
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • scopus:85194882417
ISSN
1536-125X
DOI
10.1109/TNANO.2024.3407360
language
English
LU publication?
yes
additional info
Publisher Copyright: IEEE
id
3632e21e-0252-473e-8d44-19217514c596
date added to LUP
2024-06-11 14:57:14
date last changed
2024-06-11 17:04:03
@article{3632e21e-0252-473e-8d44-19217514c596,
  abstract     = {{<p>Tunnel Field-Effect Transistors (TFETs) offer more energy efficient alternative to CMOS for design of low power circuits. In spite of this potential, circuits based on TFETs have not been experimentally demonstrated so far. In this letter, we explore TFET fabrication and basic functionality of n-TFET based circuits in the following configurations: a current mirror, a diode-connected inverter, and a cascode. Individual TFETs in the circuit operate well below 60 mV/dec operation with minimum achieved subthreshold swing (SS) of 30 mV/dec at drain voltage of 400 mV. To analyse the circuit operation, individual devices are connected via FEOL and are biased at 300 mV supply voltage, with an input frequency of 200 kHz. The measured circuit configurations demonstrate the expected functionality.</p>}},
  author       = {{Rangasamy, Gautham and Zhu, Zhongyunshen and Fhager, Lars Ohlsson and Wernersson, Lars Erik}},
  issn         = {{1536-125X}},
  keywords     = {{Current mirrors; III-V; IoT circuit configuration; Logic gates; low power; MOSFET; Nanowires; Quantum capacitance; sub-threshold analog; TFETs; Transistors; vertical nanowires}},
  language     = {{eng}},
  pages        = {{1--8}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  series       = {{IEEE Transactions on Nanotechnology}},
  title        = {{TFET Circuit Configurations Operating below 60 mV/dec}},
  url          = {{http://dx.doi.org/10.1109/TNANO.2024.3407360}},
  doi          = {{10.1109/TNANO.2024.3407360}},
  year         = {{2024}},
}