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- 2024
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Mark
TFET Circuit Configurations Operating below 60 mV/dec
(
- Contribution to journal › Article
- 2021
-
Mark
Increased Breakdown Voltage in Vertical Heterostructure III-V Nanowire MOSFETs with a Field Plate
(
- Contribution to journal › Article
- 2012
-
Mark
Performance Evaluation of III–V Nanowire Transistors
(
- Contribution to journal › Article
- 2004
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Mark
Resonant tunneling permeable base transistors with high transconductance
(
- Contribution to journal › Article
- 2002
-
Mark
Diode and transistor behaviors of three-terminal ballistic junctions
(
- Contribution to journal › Article
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Mark
Realization of a resonant tunneling permeable base transistor with optimized overgrown GaAs interfaces
(
- Contribution to journal › Article
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Mark
Three-terminal ballistic junctions: new building blocks for functional devices in nanoelectronics
2002) Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding