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2024
Mark TFET Circuit Configurations Operating below 60 mV/dec
Rangasamy, Gautham ^LU ; Zhu, Zhongyunshen ^LU ; Fhager, Lars Ohlsson ^LU and Wernersson, Lars Erik ^LU (2024) In IEEE Transactions on Nanotechnology 23. p.441-447
- Contribution to journal › Article
2021
Mark Increased Breakdown Voltage in Vertical Heterostructure III-V Nanowire MOSFETs with a Field Plate
Kilpi, Olli Pekka ^LU ; Andric, Stefan ^LU ; Svensson, Johannes ^LU ; Ram, Mamidala Saketh ^LU ; Lind, Erik ^LU and Wernersson, Lars Erik ^LU (2021) In IEEE Electron Device Letters 42(11). p.1596-1598
- Contribution to journal › Article
2012
Mark Performance Evaluation of III–V Nanowire Transistors
Jansson, Kristofer ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2012) In IEEE Transactions on Electron Devices 59(9). p.2375-2382
- Contribution to journal › Article
2004
Mark Resonant tunneling permeable base transistors with high transconductance
Lind, Erik ^LU ; Lindström, Peter ^LU and Wernersson, Lars-Erik ^LU (2004) In IEEE Electron Device Letters 25(10). p.678-680
- Contribution to journal › Article
2002
Mark Diode and transistor behaviors of three-terminal ballistic junctions
Xu, Hongqi ^LU (2002) In Applied Physics Letters 80(5). p.853-855
- Contribution to journal › Article
Mark Realization of a resonant tunneling permeable base transistor with optimized overgrown GaAs interfaces
Lind, Erik ^LU ; Wernersson, Lars-Erik ^LU ; Pietzonka, Ines and Seifert, Werner ^LU (2002) In IEEE Transactions on Electron Devices 49(6). p.1066-1069
- Contribution to journal › Article
Mark Three-terminal ballistic junctions: new building blocks for functional devices in nanoelectronics
Xu, Hongqi ^LU ; Shorubalko, Ivan ^LU ; Maximov, Ivan ^LU ; Seifert, Werner ^LU ; Omling, Pär ^LU and Samuelson, Lars ^LU (2002) Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding

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